- 专利标题: Power supply circuit for measuring transient thermal resistances of semiconductor device
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申请号: US16739289申请日: 2020-01-10
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公开(公告)号: US11532998B2公开(公告)日: 2022-12-20
- 发明人: Naoki Nishimura , Masashi Fukai
- 申请人: Sansha Electric Manufacturing Co., Ltd.
- 申请人地址: JP Osaka
- 专利权人: Sansha Electric Manufacturing Co., Ltd.
- 当前专利权人: Sansha Electric Manufacturing Co., Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: Renner, Otto, Boisselle & Sklar, LLP
- 优先权: JPJP2019-22601 20190212
- 主分类号: H02M7/5395
- IPC分类号: H02M7/5395 ; G01R31/26 ; H01L23/58 ; H02M1/32 ; H02M7/5387
摘要:
A power supply circuit for measuring transient thermal resistances includes an inverter circuit provided on a primary side of a transformer and controlled by a PWM signal, a rectifier circuit provided on a secondary side of the transformer and including a DC reactor, and a control circuit controlling the PWM signal so as to output a pulsed output current from the rectifier circuit to a semiconductor device to be measured. The control circuit sets a first PWM frequency at rising timing of the output current, and sets a second PWM frequency when a predetermined time t1 elapses from the rising timing of the output current. The control circuit sets the first PWM frequency higher than the second PWM frequency.
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