Invention Grant
- Patent Title: Salvaging bad blocks in a memory device
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Application No.: US17396083Application Date: 2021-08-06
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Publication No.: US11537484B2Publication Date: 2022-12-27
- Inventor: Sri Rama Namala , Lu Tong , Kristopher Kopel , Sheng-Huang Lee , Chang H. Siau
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G06F11/20
- IPC: G06F11/20 ; G11C16/04 ; G11C16/26

Abstract:
Disclosed in some examples are methods, systems, devices, memory devices, and machine-readable mediums for using a non-defective portion of a block of memory on which there is a defect on a different portion. Rather than disable the entire block, the system may disable only a portion of the block (e.g., a first deck of the block) and salvage a different portion of the block (e.g., a second deck of the block).
Public/Granted literature
- US20220066894A1 SALVAGING BAD BLOCKS IN A MEMORY DEVICE Public/Granted day:2022-03-03
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