Invention Grant
- Patent Title: Plasma processing apparatus
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Application No.: US17155927Application Date: 2021-01-22
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Publication No.: US11538669B2Publication Date: 2022-12-27
- Inventor: Toshifumi Ishida
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Weihrouch IP
- Priority: JPJP2020-010136 20200124
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
An apparatus for a plasma processing includes an annular member, a support unit, a chamber and a pressure control unit. The annular member has a groove or a protrusion circumferentially formed on a bottom surface thereof, the groove or the protrusion having a first thread circumferentially formed on a side surface. The support unit has a protrusion or a groove circumferentially formed on a placing surface on which the annular member is placed such that the groove or the protrusion of the annular member is fitted with the protrusion or the groove of the support unit, the protrusion or the groove of the support unit having a second thread circumferentially formed on a side surface thereof. The chamber has therein the support unit. Further, the pressure control unit controls a pressure in the chamber such that a driving force for circumferentially rotating the annular member is obtained.
Public/Granted literature
- US20210233749A1 PLASMA PROCESSING APPARATUS Public/Granted day:2021-07-29
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