公开(公告)号：US20150187542A1

公开(公告)日：2015-07-02

申请号：US14580657

申请日：2014-12-23

Applicant: Tokyo Electron Limited

Inventor： Toshifumi Ishida

IPC: H01J37/32

CPC classification number: H01J37/32513 ,  H01J37/32495 ,  H01J37/32743

Abstract: Abnormal discharge is suppressed from occurring within a chamber. A plasma processing apparatus 1 includes a cylindrical chamber 10 having an opening 51 through which a processing target substrate is loaded into the chamber; a deposition shield 71 which is provided along an inner wall of the chamber 10 and has an opening 71a at a position corresponding to the opening 51; and a shutter 55, having a plate shape, configured to open and close the opening 71a. Further, in a state that the opening 71a is closed by the shutter 55, an outer periphery of the shutter 55 is overlapped with the deposition shield 71 in a thickness direction of the shutter 55 and an inner periphery of the opening 71a is overlapped with the shutter 55 in the thickness direction of the shutter 55.

Abstract translation: 抑制室内发生异常放电。 等离子体处理装置1包括具有开口51的圆筒形室10，处理对象基板通过该开口51装载到室中; 沉积屏蔽件71，其沿着室10的内壁设置并且在与开口51对应的位置处具有开口71a; 以及具有板状的挡板55，其被构造成打开和关闭开口71a。 此外，在开口71a被闸门55关闭的状态下，挡板55的外周沿着闸门55的厚度方向与沉积屏蔽71重叠，并且开口71a的内周与 挡板55在挡板55的厚度方向上。

公开(公告)号：US11887822B2

公开(公告)日：2024-01-30

申请号：US17367948

申请日：2021-07-06

Applicant: Tokyo Electron Limited

Inventor： Toshifumi Ishida ,  Yusuke Saitoh

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32568 ,  H01J37/32715 ,  H01J2237/3341

Abstract: An edge ring includes a ramp surface of which a height decreases from an outer edge-side portion toward an inner edge-side portion. The edge ring is configured to satisfy the relation of T2/T1>T4/T3. Where, T1 is a thickness of the edge ring, before plasma treatment, at a first position on the ramp surface of the inner edge-side portion, and T2 is a thickness of the edge ring, before plasma treatment, at a second position on the ramp surface of the outer edge-side portion. T3 is a thickness of the edge ring, after plasma treatment, at the first position, and T4 is a thickness of the edge ring, after plasma treatment, at the second position.

公开(公告)号：US09210791B2

公开(公告)日：2015-12-08

申请号：US13667226

申请日：2012-11-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshifumi Ishida ,  Daisuke Hayashi

IPC: B23K9/00 ,  H05B3/68 ,  H05H1/46 ,  H01J37/32

CPC classification number: H05H1/46 ,  H01J37/32009 ,  H01J37/32724

Abstract: The present invention is a cooling block that forms an electrode for generating a plasma for use in a plasma process, and includes a channel for a cooling liquid, the cooling block comprising: a first base material and a second base material respectively made of aluminum, at least one of the first and second base materials having a recess for forming a channel for a cooling liquid; and a diffusion bonding layer, in which zinc is diffused in aluminum, and an anti-corrosion layer of a zinc oxide film, the layers being formed by interposing zinc between the first and second base materials, and by bonding the first and second base materials with zinc interposed therebetween in a heating atmosphere containing oxygen.

Abstract translation: 本发明是一种冷却块，其形成用于产生用于等离子体处理的等离子体的电极，并且包括用于冷却液体的通道，所述冷却块包括：分别由铝制成的第一基材和第二基材， 所述第一和第二基底材料中的至少一个具有用于形成用于冷却液体的通道的凹部; 以及锌在铝中扩散的扩散接合层和氧化锌膜的防腐蚀层，所述层通过在第一和第二基底材料之间插入锌而形成，并且通过将第一和第二基底材料 在含有氧的加热气氛中夹有锌。

公开(公告)号：US20130199729A1

公开(公告)日：2013-08-08

申请号：US13838468

申请日：2013-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshifumi Ishida

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/3266

Abstract: A processing gas diffusing and supplying unit is provided in a substrate processing unit including a processing chamber for accommodating a substrate. The processing gas diffusing and supplying unit comprises a main body; a plate supported by the main body and having a plurality of gas supply holes; a partition wall; an internal space having a first and a second space partitioned by the partition wall; a first and a second opening respectively communicating with the first and the second space while facing the plate, first and a second space being connected to a first and a second processing gas introducing pipe of the processing chamber, respectively; and a first and a second shielding portion respectively installed in the first and the second space and having a surface facing the first and the second opening.

Abstract translation: 处理气体扩散供给单元设置在包括用于容纳基板的处理室的基板处理单元中。 处理气体扩散供给单元包括主体; 由主体支撑并具有多个气体供给孔的板; 隔墙; 内部空间，其具有由隔壁隔开的第一和第二空间; 分别与第一和第二空间同时面对板的第一和第二开口，第一和第二空间分别连接到处理室的第一和第二处理气体导入管; 以及分别安装在第一和第二空间中并且具有面向第一和第二开口的表面的第一和第二屏蔽部分。

公开(公告)号：US11538669B2

公开(公告)日：2022-12-27

申请号：US17155927

申请日：2021-01-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshifumi Ishida

IPC: H01J37/32

Abstract: An apparatus for a plasma processing includes an annular member, a support unit, a chamber and a pressure control unit. The annular member has a groove or a protrusion circumferentially formed on a bottom surface thereof, the groove or the protrusion having a first thread circumferentially formed on a side surface. The support unit has a protrusion or a groove circumferentially formed on a placing surface on which the annular member is placed such that the groove or the protrusion of the annular member is fitted with the protrusion or the groove of the support unit, the protrusion or the groove of the support unit having a second thread circumferentially formed on a side surface thereof. The chamber has therein the support unit. Further, the pressure control unit controls a pressure in the chamber such that a driving force for circumferentially rotating the annular member is obtained.

公开(公告)号：US09484213B2

公开(公告)日：2016-11-01

申请号：US13838468

申请日：2013-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshifumi Ishida

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/3266

Abstract: A processing gas diffusing and supplying unit is provided in a substrate processing unit including a processing chamber for accommodating a substrate. The processing gas diffusing and supplying unit comprises a main body; a plate supported by the main body and having a plurality of gas supply holes; a partition wall; an internal space having a first and a second space partitioned by the partition wall; a first and a second opening respectively communicating with the first and the second space while facing the plate, first and a second space being connected to a first and a second processing gas introducing pipe of the processing chamber, respectively; and a first and a second shielding portion respectively installed in the first and the second space and having a surface facing the first and the second opening.

Abstract translation: 处理气体扩散供给单元设置在包括用于容纳基板的处理室的基板处理单元中。 处理气体扩散供给单元包括主体; 由主体支撑并具有多个气体供给孔的板; 隔墙; 内部空间，其具有由隔壁隔开的第一和第二空间; 分别与第一和第二空间同时面对板的第一和第二开口，第一和第二空间分别连接到处理室的第一和第二处理气体导入管; 以及分别安装在第一和第二空间中并具有面向第一和第二开口的表面的第一和第二屏蔽部分。