Invention Grant
- Patent Title: Substrate processing apparatus
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Application No.: US17016881Application Date: 2020-09-10
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Publication No.: US11538697B2Publication Date: 2022-12-27
- Inventor: Sang Ki Nam , Jang-Yeob Lee , Sungyeol Kim , Sunghyup Kim , Soonam Park , Siqing Lu
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2019-0112913 20190911
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01J37/32 ; H01L21/3213

Abstract:
A substrate processing apparatus, including a processing chamber including a first internal space and a second internal space arranged in a vertical direction, the first internal space being configured to receive process gas to generate plasma; an induction electrode configured to divide the processing chamber, and having a plurality of through-holes arranged to connect the first internal space and the second internal space, wherein the plurality of through-holes are configured to induce an ion beam extracted from ions included in the plasma generated in the first internal space; a radical supply located in the second internal space, and including a reservoir configured to receive chemical liquid in which an object to be processed is immersed, and a lower electrode configured to apply nanopulses to the reservoir to generate radicals from the chemical liquid; and a chemical liquid supply configured to supply the chemical liquid to the reservoir.
Public/Granted literature
- US20210074558A1 SUBSTRATE PROCESSING APPARATUS Public/Granted day:2021-03-11
Information query
IPC分类: