公开(公告)号：US20230307217A1

公开(公告)日：2023-09-28

申请号：US18123068

申请日：2023-03-17

Applicant: SAMSUNG-ELECTRONICS CO., LTD.

Inventor： Dooyoung Gwak ,  Soonam Park ,  Janggyoo Yang ,  Myungsun Choi ,  Jaemin Ha

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/66

CPC classification number: H01J37/32862 ,  H01J37/32743 ,  H01L21/31144 ,  H01L21/31116 ,  H01L22/10 ,  H01J37/32788 ,  H01J2237/3343 ,  H01J2237/24485

Abstract: An operation method of an etching apparatus includes transferring, from a load lock chamber to a process chamber, a substrate on which an etching target layer is formed, first etching the etching target layer on the substrate in a first etching time, transferring the substrate to a storage location in a state in a vacuum state, intermediate cleaning the process chamber in a first cleaning time, transferring the substrate from the storage location to the process chamber, second etching the etching target layer on the substrate in a second etching time, and returning the substrate to the load lock chamber. The etching target layer is formed in a predetermined etching pattern by the first etching and the second etching.

公开(公告)号：US11538697B2

公开(公告)日：2022-12-27

申请号：US17016881

申请日：2020-09-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Ki Nam ,  Jang-Yeob Lee ,  Sungyeol Kim ,  Sunghyup Kim ,  Soonam Park ,  Siqing Lu

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/3213

Abstract: A substrate processing apparatus, including a processing chamber including a first internal space and a second internal space arranged in a vertical direction, the first internal space being configured to receive process gas to generate plasma; an induction electrode configured to divide the processing chamber, and having a plurality of through-holes arranged to connect the first internal space and the second internal space, wherein the plurality of through-holes are configured to induce an ion beam extracted from ions included in the plasma generated in the first internal space; a radical supply located in the second internal space, and including a reservoir configured to receive chemical liquid in which an object to be processed is immersed, and a lower electrode configured to apply nanopulses to the reservoir to generate radicals from the chemical liquid; and a chemical liquid supply configured to supply the chemical liquid to the reservoir.

公开(公告)号：US11195696B2

公开(公告)日：2021-12-07

申请号：US16850252

申请日：2020-04-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongkyu Shin ,  Sangki Nam ,  Soonam Park ,  Akira Koshiishi ,  Kyuhee Han

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/3065 ,  H01J37/063

Abstract: An electron beam generator, a plasma processing apparatus, and a plasma processing method, the electron beam generator including a side insulator configured to surround the substrate support, the side insulator having an electron beam chamber therein; a first electrode embedded in the side insulator and adjacent to a first side wall of the electron beam chamber; a second electrode on a second side wall of the electron beam chamber; and a guide in an outlet of the electron beam chamber, the guide including slits through which electron beams generated in the electron beam chamber are transmittable into the process chamber.