Invention Grant
- Patent Title: Interposer structure, semiconductor package comprising the same, and method for fabricating the same
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Application No.: US16881452Application Date: 2020-05-22
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Publication No.: US11538747B2Publication Date: 2022-12-27
- Inventor: Shaofeng Ding , Jae June Jang , Jeong Hoon Ahn , Yun Ki Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2019-0130613 20191021
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/00 ; H01L23/522 ; H01L49/02 ; H01L23/48 ; H01L23/498

Abstract:
Provided is an interposer structure. The interposer structure comprises an interposer substrate, an interlayer insulating film which covers a top surface of the interposer substrate, a capacitor structure in the interlayer insulating film and a wiring structure including a first wiring pattern and a second wiring pattern spaced apart from the first wiring pattern, on the interlayer insulating film, wherein the capacitor structure includes an upper electrode connected to the first wiring pattern, a lower electrode connected to the second wiring pattern, and a capacitor dielectric film between the upper electrode and the lower electrode.
Public/Granted literature
- US20210118794A1 INTERPOSER STRUCTURE, SEMICONDUCTOR PACKAGE COMPRISING THE SAME, AND METHOD FOR FABRICATING THE SAME Public/Granted day:2021-04-22
Information query
IPC分类: