Interposer structure, semiconductor package comprising the same, and method for fabricating the same
Abstract:
Provided is an interposer structure. The interposer structure comprises an interposer substrate, an interlayer insulating film which covers a top surface of the interposer substrate, a capacitor structure in the interlayer insulating film and a wiring structure including a first wiring pattern and a second wiring pattern spaced apart from the first wiring pattern, on the interlayer insulating film, wherein the capacitor structure includes an upper electrode connected to the first wiring pattern, a lower electrode connected to the second wiring pattern, and a capacitor dielectric film between the upper electrode and the lower electrode.
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