公开(公告)号：US11538747B2

公开(公告)日：2022-12-27

申请号：US16881452

申请日：2020-05-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shaofeng Ding ,  Jae June Jang ,  Jeong Hoon Ahn ,  Yun Ki Choi

IPC: H01L29/76 ,  H01L29/00 ,  H01L23/522 ,  H01L49/02 ,  H01L23/48 ,  H01L23/498

Abstract: Provided is an interposer structure. The interposer structure comprises an interposer substrate, an interlayer insulating film which covers a top surface of the interposer substrate, a capacitor structure in the interlayer insulating film and a wiring structure including a first wiring pattern and a second wiring pattern spaced apart from the first wiring pattern, on the interlayer insulating film, wherein the capacitor structure includes an upper electrode connected to the first wiring pattern, a lower electrode connected to the second wiring pattern, and a capacitor dielectric film between the upper electrode and the lower electrode.