- 专利标题: Optoelectronic semiconductor chip and method of manufacturing an optoelectronic semiconductor chip
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申请号: US16756846申请日: 2018-10-16
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公开(公告)号: US11538964B2公开(公告)日: 2022-12-27
- 发明人: David O'Brien , Desiree Queren , David Racz , Britta Goeoetz , Michael Schumann
- 申请人: Osram OLED GmbH
- 申请人地址: DE Regensburg
- 专利权人: Osram OLED GmbH
- 当前专利权人: Osram OLED GmbH
- 当前专利权人地址: DE Regensburg
- 代理机构: Viering, Jentschura & Partner mbB
- 优先权: DE102017124307.0 20171018
- 国际申请: PCT/EP2018/078257 WO 20181016
- 国际公布: WO2019/076902 WO 20190425
- 主分类号: H01L33/50
- IPC分类号: H01L33/50 ; H01L27/15 ; H01L33/38 ; H01L33/46
摘要:
An optoelectronic semiconductor chip may include an active region configured to emit electromagnetic radiation during operation of said optoelectronic semiconductor chip. The optoelectronic semiconductor chip comprises conversion elements arranged to convert the wavelength of the electromagnetic radiation emitted by the active region during operation, and at least one barrier at least partially impermeable to the electromagnetic radiation emitted by the active region. The barrier is disposed in a lateral direction between the conversion elements, the lateral direction being parallel to the main extension plane of the semiconductor body, and the barrier extending transversely to the lateral direction. The active region has at least two emission regions which can be driven separately from each other, and each of the conversion elements is disposed in a radiation direction of the electromagnetic radiation emitted from one of the emission regions. A method for manufacturing an optoelectronic semiconductor chip is also disclosed.
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