公开(公告)号：US11605667B2

公开(公告)日：2023-03-14

申请号：US16977815

申请日：2019-02-26

Applicant: OSRAM OLED GmbH

Inventor： Vesna Mueller ,  David O'Brien

IPC: H01L33/38 ,  H01L33/50 ,  H01L27/15

Abstract: A component may include a semiconductor body and a converter layer. The converter layer may have phosphor particles and an electrically conductive matrix material where the phosphor particles are embedded in the matrix material. The converter layer may be arranged on the semiconductor body and may have a plurality of sublayers that are spatially set apart from one another and can be electrically contacted individually. The semiconductor body may have an active zone for producing electromagnetic radiation where the sublayers of the converter layer are designed for local electrical contacting of the active zone.

公开(公告)号：US20210238477A1

公开(公告)日：2021-08-05

申请号：US16762506

申请日：2018-11-08

Applicant: OSRAM OLED GmbH

Inventor： Rainer Butendeich ,  Philipp Pust ,  David O'Brien ,  Ion Stoll ,  Marcus Adam

IPC: C09K11/08 ,  H01L33/50

Abstract: The invention relates to a luminescent material having the formula (MB) (TA) 3−2x (TC) 1+2xO4−4xN4x:E, wherein: —TA is selected from a group of monovalent metals, including Li, Na, Cu, Ag and combinations thereof; —MB is selected from a group of divalent metals including Mg, Ca, Sr, Ba, Zn and combinations thereof; —TC is selected from a group of trivalent metals including B, Al, Ga, In, Y, Fe, Cr, Sc, rare earth metals and combinations thereof; —E is selected from a group including Eu, Mn, Ce, Yb and combinations thereof, and wherein 0

公开(公告)号：US11611022B2

公开(公告)日：2023-03-21

申请号：US16753344

申请日：2018-09-25

Applicant: Osram OLED GmbH

Inventor： Ralph Peter Bertram ,  David O'Brien ,  Rainer Butendeich

IPC: H01L33/50 ,  B82Y20/00

Abstract: An optoelectronic component may include a radiation-emitting semiconductor chip configured to emit electromagnetic radiation and a phosphor mixture. The excitation spectrum may have a peak wavelength ranging from 435 nm to 460 nm. The phosphor mixture may have three phosphors configured to emit electromagnetic radiation in different spectral ranges.

公开(公告)号：US20200287102A1

公开(公告)日：2020-09-10

申请号：US16753344

申请日：2018-09-25

Applicant: Osram OLED GmbH

Inventor： Ralph Peter Bertram ,  David O'Brien ,  Rainer Butendeich

IPC: H01L33/50

Abstract: An optoelectronic component may include a radiation-emitting semiconductor chip configured to emit electromagnetic radiation and a phosphor mixture. The excitation spectrum may have a peak wavelength ranging from 435 nm to 460 nm. The phosphor mixture may have three phosphors configured to emit electromagnetic radiation in different spectral ranges.

公开(公告)号：US20200287097A1

公开(公告)日：2020-09-10

申请号：US16640289

申请日：2018-09-06

Applicant: OSRAM OLED GmbH

Inventor： David O'Brien

IPC: H01L33/50 ,  H01L33/56 ,  H01L33/04

Abstract: An optoelectronic component is disclosed. In an embodiment an optoelectronic component includes a semiconductor chip configured to emit radiation and a conversion element including quantum dots, the conversion element configured to convert a wavelength of the radiation, wherein each quantum dot includes a wavelength-converting core and an inorganic encapsulation, wherein inorganic encapsulations form a matrix material of at least adjacent quantum dots, and wherein the adjacent quantum dots have a distance of at least 10 nm.

公开(公告)号：US11563154B2

公开(公告)日：2023-01-24

申请号：US16640289

申请日：2018-09-06

Applicant: OSRAM OLED GmbH

Inventor： David O'Brien

IPC: H01L33/50 ,  H01L33/04 ,  H01L33/56

Abstract: An optoelectronic component is disclosed. In an embodiment an optoelectronic component includes a semiconductor chip configured to emit radiation and a conversion element including quantum dots, the conversion element configured to convert a wavelength of the radiation, wherein each quantum dot includes a wavelength-converting core and an inorganic encapsulation, wherein inorganic encapsulations form a matrix material of at least adjacent quantum dots, and wherein the adjacent quantum dots have a distance of at least 10 nm.

公开(公告)号：US11542431B2

公开(公告)日：2023-01-03

申请号：US16762506

申请日：2018-11-08

Applicant: OSRAM OLED GmbH

Inventor： Rainer Butendeich ,  Philipp Pust ,  David O'Brien ,  Ion Stoll ,  Marcus Adam

IPC: C09K11/08 ,  H05B45/24 ,  C09K11/59 ,  C09K11/77 ,  H01L33/50

Abstract: A phosphor combination may include a first phosphor and a second phosphor. The second phosphor may be a red-emitting quantum dot phosphor. The phosphor combination may optionally include a third phosphor that is a red-emitting phosphor with the formula (MB) (TA)3-2x(TC)1+2xO4-4xN4x:E. A conversion element may include the phosphor combination. An optoelectronic device may include the phosphor combination and a radiation-emitting semiconductor chip.

公开(公告)号：US11538964B2

公开(公告)日：2022-12-27

申请号：US16756846

申请日：2018-10-16

Applicant: Osram OLED GmbH

Inventor： David O'Brien ,  Desiree Queren ,  David Racz ,  Britta Goeoetz ,  Michael Schumann

IPC: H01L33/50 ,  H01L27/15 ,  H01L33/38 ,  H01L33/46

Abstract: An optoelectronic semiconductor chip may include an active region configured to emit electromagnetic radiation during operation of said optoelectronic semiconductor chip. The optoelectronic semiconductor chip comprises conversion elements arranged to convert the wavelength of the electromagnetic radiation emitted by the active region during operation, and at least one barrier at least partially impermeable to the electromagnetic radiation emitted by the active region. The barrier is disposed in a lateral direction between the conversion elements, the lateral direction being parallel to the main extension plane of the semiconductor body, and the barrier extending transversely to the lateral direction. The active region has at least two emission regions which can be driven separately from each other, and each of the conversion elements is disposed in a radiation direction of the electromagnetic radiation emitted from one of the emission regions. A method for manufacturing an optoelectronic semiconductor chip is also disclosed.

公开(公告)号：US20200243728A1

公开(公告)日：2020-07-30

申请号：US16756846

申请日：2018-10-16

Applicant: Osram OLED GmbH

Inventor： David O'Brien ,  Desiree Queren ,  David Racz ,  Britta Goeoetz ,  Michael Schumann

IPC: H01L33/50 ,  H01L33/38 ,  H01L27/15 ,  H01L33/46

Abstract: An optoelectronic semiconductor chip may include an active region configured to emit electromagnetic radiation during operation of said optoelectronic semiconductor chip. The optoelectronic semiconductor chip comprises conversion elements arranged to convert the wavelength of the electromagnetic radiation emitted by the active region during operation, and at least one barrier at least partially impermeable to the electromagnetic radiation emitted by the active region. The barrier is disposed in a lateral direction between the conversion elements, the lateral direction being parallel to the main extension plane of the semiconductor body, and the barrier extending transversely to the lateral direction. The active region has at least two emission regions which can be driven separately from each other, and each of the conversion elements is disposed in a radiation direction of the electromagnetic radiation emitted from one of the emission regions. A method for manufacturing an optoelectronic semiconductor chip is also disclosed.