Invention Grant
- Patent Title: Synthesis and use of precursors for ALD of group VA element containing thin films
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Application No.: US17173467Application Date: 2021-02-11
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Publication No.: US11542600B2Publication Date: 2023-01-03
- Inventor: Viljami Pore , Timo Hatanpää , Mikko Ritala , Markku Leskelä
- Applicant: ASM IP HOLDING B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP HOLDING B.V.
- Current Assignee: ASM IP HOLDING B.V.
- Current Assignee Address: NL Almere
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C23C16/455 ; C23C16/30 ; H01L21/02 ; H01L45/00 ; C23C16/18 ; C23C16/44
Abstract:
Atomic layer deposition (ALD) processes for forming Group VA element containing thin films, such as Sb, Sb—Te, Ge—Sb and Ge—Sb—Te thin films are provided, along with related compositions and structures. Sb precursors of the formula Sb(SiR1R2R3)3 are preferably used, wherein R1, R2, and R3 are alkyl groups. As, Bi and P precursors are also described. Methods are also provided for synthesizing these Sb precursors. Methods are also provided for using the Sb thin films in phase change memory devices.
Public/Granted literature
- US20210164101A1 SYNTHESIS AND USE OF PRECURSORS FOR ALD OF GROUP VA ELEMENT CONTAINING THIN FILMS Public/Granted day:2021-06-03
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