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105 条记录 (耗时 0.045 秒)

    METHOD AND APPARATUS FOR FILLING A RECESS FORMED WITHIN A SUBSTRATE SURFACE
    1.
    发明申请
    METHOD AND APPARATUS FOR FILLING A RECESS FORMED WITHIN A SUBSTRATE SURFACE 有权

    公开(公告)号：US20230126231A1

    公开(公告)日：2023-04-27

    申请号：US18084789

    申请日：2022-12-20

    申请人： ASM IP Holding B.V.

    发明人： Viljami Pore ,  Zecheng Liu

    IPC分类号： H01L21/762 ,  H01L21/67 ,  H01J37/32 ,  H01L29/06

    摘要： There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, introducing a second reactant to the substrate with a second dose, wherein the first and the second doses overlap in an overlap area where the first and second reactants react and leave an initially substantially unreacted area where the first and the second areas do not overlap; introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant to form deposited material; and etching the deposited material. An apparatus for filling a recess is also disclosed.

    METHODS AND SYSTEMS FOR FILLING A GAP
    2.
    发明申请
    METHODS AND SYSTEMS FOR FILLING A GAP 有权

    公开(公告)号：US20230098575A1

    公开(公告)日：2023-03-30

    申请号：US17953769

    申请日：2022-09-27

    申请人： ASM IP Holding B.V.

    发明人： Charles Dezelah ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Viljami Pore

    IPC分类号： C23C16/04 ,  C23C16/08 ,  C23C16/513

    摘要： Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a convertible layer on the substrate and exposing the substrate to a conversion reactant. Accordingly, at least a part of the convertible layer is converted into a gap filling fluid. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

    METHODS FOR FILLING A GAP AND RELATED SYSTEMS AND DEVICES
    6.
    发明申请
    METHODS FOR FILLING A GAP AND RELATED SYSTEMS AND DEVICES 有权

    公开(公告)号：US20220165615A1

    公开(公告)日：2022-05-26

    申请号：US17530691

    申请日：2021-11-19

    申请人： ASM IP Holding B.V.

    发明人： Zecheng Liu ,  Viljami Pore ,  Jia Li Yao ,  René Henricus Jozef Vervuurt

    IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L21/3065 ,  H01J37/32

    摘要： Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a first plasma treatment and subjecting the substrate to a second plasma treatment. Thus the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a material on the lower surface.

    Si precursors for deposition of SiN at low temperatures
    7.
    发明授权
    Si precursors for deposition of SiN at low temperatures 有权

    公开(公告)号：US11289327B2

    公开(公告)日：2022-03-29

    申请号：US16574542

    申请日：2019-09-18

    申请人： ASM IP HOLDING B.V.

    发明人： Antti J. Niskanen ,  Shang Chen ,  Viljami Pore

    IPC分类号： H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  H01L29/66

    摘要： Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).

    Method and apparatus for filling a recess formed within a substrate surface
    8.
    发明授权
    Method and apparatus for filling a recess formed within a substrate surface 有权

    公开(公告)号：US11227789B2

    公开(公告)日：2022-01-18

    申请号：US16792571

    申请日：2020-02-17

    申请人： ASM IP Holding B.V.

    发明人： Viljami Pore ,  Zecheng Liu

    IPC分类号： H01L21/762 ,  H01L29/06 ,  H01L21/67 ,  H01J37/32

    摘要： There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, introducing a second reactant to the substrate with a second dose, wherein the first and the second doses overlap in an overlap area where the first and second reactants react and leave an initially substantially unreacted area where the first and the second areas do not overlap; introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant to form deposited material; and etching the deposited material. An apparatus for filling a recess is also disclosed.

    Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES
    9.
    发明申请
    Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES 有权

    公开(公告)号：US20210082684A1

    公开(公告)日：2021-03-18

    申请号：US17101428

    申请日：2020-11-23

    申请人： ASM IP HOLDING B.V.

    发明人： Antti J. Niskanen ,  Shang Chen ,  Viljami Pore ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Suvi P. Haukka

    IPC分类号： H01L21/02

    摘要： Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).