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    DEPOSITION OF TRANSITION METAL-COMPRISING MATERIAL
    1.
    发明申请
    DEPOSITION OF TRANSITION METAL-COMPRISING MATERIAL 有权

    公开(公告)号：US20250122612A1

    公开(公告)日：2025-04-17

    申请号：US18987577

    申请日：2024-12-19

    Applicant: ASM IP Holding B.V.

    Inventor： Miika Mattinen ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

    IPC: C23C16/18 ,  C23C16/08

    Abstract: The current disclosure relates to the manufacture of semiconductor devices. Specifically, the disclosure relates to a method of forming a transition metal-comprising material on a substrate by a cyclic deposition process. The method comprises providing a substrate in a reaction chamber, providing a transition metal precursor comprising a transition metal compound in the reaction chamber, and providing a second precursor in the reaction chamber, wherein the transition metal compound comprises a transition metal halide bound to an adduct ligand, and the second precursor comprises a chalcogen or a pnictogen. The disclosure further relates to a method of forming a transition metal layer, and to semiconductor devices. Further, a vapor deposition assembly is disclosed.

    VAPOR DEPOSITION PROCESSES
    2.
    发明申请
    VAPOR DEPOSITION PROCESSES 有权

    公开(公告)号：US20240417852A1

    公开(公告)日：2024-12-19

    申请号：US18818298

    申请日：2024-08-28

    Applicant: ASM IP Holding B.V.

    Inventor： Timo Hatanpää ,  Anton Vihervaara ,  Mikko Ritala

    IPC: C23C16/455 ,  C23C16/08

    Abstract: The present disclosure relates to methods for depositing an elemental metal or semimetal-containing material on a substrate by a cyclic deposition process, to an elemental metal or semimetal-containing layer, to a semiconductor structure and a device, and to deposition assemblies for depositing elemental metal or semimetal-containing material on a substrate. A method according to the current disclosure comprises providing a substrate in a reaction chamber, providing a metal or a semimetal precursor to the reaction chamber in a vapor phase, and providing a reducing agent into the reaction chamber in a vapor phase to form elemental metal or semimetal-containing material on the substrate. The reducing agent according to the method comprises a cyclohexadiene compound selected from compounds comprising a germanium-containing substituent.

    Vapor deposition of thin films comprising gold
    4.
    发明授权
    Vapor deposition of thin films comprising gold 有权

    公开(公告)号：US11499227B2

    公开(公告)日：2022-11-15

    申请号：US17330994

    申请日：2021-05-26

    Applicant: ASM IP Holding B.V.

    Inventor： Maarit Mäkelä ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

    IPC: C23C16/06 ,  C23C16/455 ,  C23C16/18

    Abstract: Vapor deposition processes for forming thin films comprising gold on a substrate in a reaction space are provided. The processes can be cyclical vapor deposition processes, such as atomic layer deposition (ALD) processes. The processes can include contacting the substrate with a gold precursor comprising at least one sulfur donor ligand and at least one alkyl ligand, and contacting the substrate with a second reactant comprising ozone. The deposited thin films comprising gold can be uniform, continuous, and conductive at very low thicknesses.

    Vapor deposition of thin films comprising gold
    5.
    发明授权
    Vapor deposition of thin films comprising gold 有权

    公开(公告)号：US11047046B2

    公开(公告)日：2021-06-29

    申请号：US16178199

    申请日：2018-11-01

    Applicant: ASM IP Holding B.V.

    Inventor： Maarit Mäkelä ,  Timo Hatanpää ,  Mikko Rítala ,  Markku Leskelä

    IPC: C23C16/06 ,  C23C16/455 ,  C23C16/18

    Abstract: Vapor deposition processes for forming thin films comprising gold on a substrate in a reaction space are provided. The processes can be cyclical vapor deposition processes, such as atomic layer deposition (ALD) processes. The processes can include contacting the substrate with a gold precursor comprising at least one sulfur donor ligand and at least one alkyl ligand, and contacting the substrate with a second reactant comprising ozone. The deposited thin films comprising gold can be uniform, continuous, and conductive at very low thicknesses.

    Vapor deposition processes
    9.
    发明授权
    Vapor deposition processes 有权

    公开(公告)号：US12104250B2

    公开(公告)日：2024-10-01

    申请号：US17822576

    申请日：2022-08-26

    Applicant: ASM IP Holding, B.V.

    Inventor： Timo Hatanpää ,  Anton Vihervaara ,  Mikko Ritala

    IPC: C23C16/455 ,  C23C16/08

    CPC classification number: C23C16/45553 ,  C23C16/08 ,  C23C16/45527

    Abstract: The present disclosure relates to methods for depositing an elemental metal or semimetal-containing material on a substrate by a cyclic deposition process, to an elemental metal or semimetal-containing layer, to a semiconductor structure and a device, and to deposition assemblies for depositing elemental metal or semimetal-containing material on a substrate. A method according to the current disclosure comprises providing a substrate in a reaction chamber, providing a metal or a semimetal precursor to the reaction chamber in a vapor phase, and providing a reducing agent into the reaction chamber in a vapor phase to form elemental metal or semimetal-containing material on the substrate. The reducing agent according to the method comprises a cyclohexadiene compound selected from compounds comprising a germanium-containing substituent.

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