A new class of efficient vacuum electronic devices (VEDs) for THz wave generation and amplification are disclosed. The EM circuits of these VEDs are micro-fabricated from Si wafers with high precision. The original design of the EM circuits overcomes the main limitations of existing THz VEDs constructed from metal or metallized components, such as low fabrication precision, high signal losses, low tolerance to electric breakdown and low beam efficiency. The disclosed VEDs may have up to 50% beam efficiency in the THz band.