Invention Grant
- Patent Title: Integrated circuit and semiconductor device including same
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Application No.: US17224558Application Date: 2021-04-07
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Publication No.: US11545488B2Publication Date: 2023-01-03
- Inventor: Chang-Bum Kim , Sunghoon Kim , Daeseok Byeon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2020-0135838 20201020
- Main IPC: H01L27/07
- IPC: H01L27/07 ; H01L29/06 ; H01C1/012 ; H01C1/014 ; H01C7/00 ; H01C13/02 ; H01L49/02

Abstract:
An integrated circuit includes; a substrate including a single active region, a first active resistor formed on the substrate, and a transistor including a first junction area in the single active region. The first active resistor and the transistor are electrically connected through the first junction area. The first active resistor is formed between a first node and a second node included in the first junction area. The first node is connected to a first contact, and the second node is connected to a second contact.
Public/Granted literature
- US20220122967A1 INTEGRATED CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING SAME Public/Granted day:2022-04-21
Information query
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