Invention Grant
- Patent Title: Semiconductor structures with body contact regions embedded in polycrystalline semiconductor material
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Application No.: US17029667Application Date: 2020-09-23
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Publication No.: US11545549B2Publication Date: 2023-01-03
- Inventor: Steven M. Shank , Siva P. Adusumilli , Yves Ngu , Michael Zierak
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Thompson Hine LLP
- Agent Francois Pagette
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L27/12 ; H01L29/04 ; H01L21/763

Abstract:
Body-contacted semiconductor structures and methods of forming a body-contacted semiconductor structure. A semiconductor substrate, which contains of a single-crystal semiconductor material, includes a device region and a plurality of body contact regions each comprised of the single-crystal semiconductor material. A polycrystalline layer and polycrystalline regions are formed in the semiconductor substrate. The polycrystalline regions are positioned between the polycrystalline layer and the device region, and the polycrystalline regions have a laterally-spaced arrangement with a gap between each adjacent pair of the polycrystalline regions. One of the plurality of body contact regions is arranged in the gap between each adjacent pair of the polycrystalline regions.
Public/Granted literature
- US20220093744A1 SEMICONDUCTOR STRUCTURES WITH BODY CONTACT REGIONS EMBEDDED IN POLYCRYSTALLINE SEMICONDUCTOR MATERIAL Public/Granted day:2022-03-24
Information query
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