Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17189748Application Date: 2021-03-02
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Publication No.: US11546541B2Publication Date: 2023-01-03
- Inventor: Masato Osawa
- Applicant: OLYMPUS CORPORATION
- Applicant Address: JP Hachioji
- Assignee: OLYMPUS CORPORATION
- Current Assignee: OLYMPUS CORPORATION
- Current Assignee Address: JP Hachioji
- Agency: WHDA, LLP
- Main IPC: H04N5/3745
- IPC: H04N5/3745 ; A61B1/05 ; H04N5/225 ; H04N5/376 ; H04N5/378 ; H04N5/374 ; H04N5/363 ; H04N5/369

Abstract:
A semiconductor device according to an embodiment includes a plurality of element arrays, a signal-processing circuit, and a comparison-voltage generation circuit. Each element array is selectively connected to a vertical signal line and includes an amplification transistor configured to output a first analog signal on the basis of an input analog voltage and an actual value of variation of a characteristic value of each element array included in the plurality of element arrays. The comparison-voltage generation circuit is configured to output a gradually increasing or gradually decreasing comparison voltage. The signal-processing circuit includes a storage circuit and is configured to compare the first analog signal with the comparison voltage and store a timing at which the comparison voltage and a value of a second analog signal generated by adding a predetermined absolute value to the first analog signal match each other onto the storage circuit.
Public/Granted literature
- US20210185262A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-06-17
Information query
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