Invention Grant
- Patent Title: Memory device and an operating method thereof
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Application No.: US17215914Application Date: 2021-03-29
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Publication No.: US11551729B2Publication Date: 2023-01-10
- Inventor: Sangyun Kim , Kyungryun Kim , Junghwan Park , Yeonkyu Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2020-0111528 20200902
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C5/14 ; G11C7/22 ; G11C7/06

Abstract:
A memory device includes: a first circuit; a second circuit; and an adaptive body bias generator configured to receive frequency detection information or temperature detection information, to apply a first forward body bias or a first reverse body bias to the first circuit in response to the frequency detection information or the temperature detection information, and to apply a second forward body bias or a second reverse body bias to the second circuit in response to the frequency detection information or the temperature detection information.
Public/Granted literature
- US20220068318A1 MEMORY DEVICE AND AN OPERATING METHOD THEREOF Public/Granted day:2022-03-03
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