Invention Grant
- Patent Title: Semiconductor device with metallization structure on opposite sides of a semiconductor portion
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Application No.: US17170359Application Date: 2021-02-08
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Publication No.: US11552016B2Publication Date: 2023-01-10
- Inventor: Paul Ganitzer , Martin Poelzl
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Priority: DE102016122162.7 20161117
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/532 ; H01L23/535 ; H01L21/78 ; H01L23/495 ; H01L21/48 ; H01L29/78 ; H01L23/482 ; H01L21/683 ; H01L21/3213 ; H01L23/00 ; H01L23/31 ; H01L29/40
Abstract:
A semiconductor device includes a semiconductor layer with a thickness of at most 50 μm. A first metallization structure is disposed on a first surface of the semiconductor layer. The first metallization structure includes a first copper region with a first thickness. A second metallization structure is disposed on a second surface of the semiconductor layer opposite to the first surface. The second metallization structure includes a second copper region with a second thickness.
Public/Granted literature
- US20210183763A1 SEMICONDUCTOR DEVICE WITH METALLIZATION STRUCTURE ON OPPOSITE SIDES OF A SEMICONDUCTOR PORTION Public/Granted day:2021-06-17
Information query
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