Invention Grant
- Patent Title: Structure of semiconductor device and method for bonding two substrates
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Application No.: US16984601Application Date: 2020-08-04
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Publication No.: US11557558B2Publication Date: 2023-01-17
- Inventor: Zhirui Sheng , Hui-Ling Chen , Chung-Hsing Kuo , Chun-Ting Yeh , Ming-Tse Lin , Chien En Hsu
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Priority: CN202010637115.7 20200703
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L23/00 ; H01L25/065 ; H01L25/00

Abstract:
A structure of semiconductor device is provided, including a first circuit structure, formed on a first substrate. A first test pad is disposed on the first substrate. A second circuit structure is formed on a second substrate. A second test pad is disposed on the second substrate. A first bonding pad of the first circuit structure is bonded to a second bonding pad of the second circuit structure. One of the first test pad and the second test pad is an inner pad while another one of the first test pad and the second test pad is an outer pad, wherein the outer pad surrounds the inner pad.
Public/Granted literature
- US20220005775A1 STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD FOR BONDING TWO SUBSTRATES Public/Granted day:2022-01-06
Information query
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