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公开(公告)号:US20220005775A1
公开(公告)日:2022-01-06
申请号:US16984601
申请日:2020-08-04
Applicant: United Microelectronics Corp.
Inventor: Zhirui Sheng , Hui-Ling Chen , Chung-Hsing Kuo , Chun-Ting Yeh , Ming-Tse Lin , Chien En Hsu
IPC: H01L23/00 , H01L25/065 , H01L25/00 , H01L21/66
Abstract: A structure of semiconductor device is provided, including a first circuit structure, formed on a first substrate. A first test pad is disposed on the first substrate. A second circuit structure is formed on a second substrate. A second test pad is disposed on the second substrate. A first bonding pad of the first circuit structure is bonded to a second bonding pad of the second circuit structure. One of the first test pad and the second test pad is an inner pad while another one of the first test pad and the second test pad is an outer pad, wherein the outer pad surrounds the inner pad.
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公开(公告)号:US11557558B2
公开(公告)日:2023-01-17
申请号:US16984601
申请日:2020-08-04
Applicant: United Microelectronics Corp.
Inventor: Zhirui Sheng , Hui-Ling Chen , Chung-Hsing Kuo , Chun-Ting Yeh , Ming-Tse Lin , Chien En Hsu
IPC: H01L21/66 , H01L23/00 , H01L25/065 , H01L25/00
Abstract: A structure of semiconductor device is provided, including a first circuit structure, formed on a first substrate. A first test pad is disposed on the first substrate. A second circuit structure is formed on a second substrate. A second test pad is disposed on the second substrate. A first bonding pad of the first circuit structure is bonded to a second bonding pad of the second circuit structure. One of the first test pad and the second test pad is an inner pad while another one of the first test pad and the second test pad is an outer pad, wherein the outer pad surrounds the inner pad.
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公开(公告)号:US12148723B2
公开(公告)日:2024-11-19
申请号:US18077191
申请日:2022-12-07
Applicant: United Microelectronics Corp.
Inventor: Zhirui Sheng , Hui-Ling Chen , Chung-Hsing Kuo , Chun-Ting Yeh , Ming-Tse Lin , Chien En Hsu
IPC: H01L21/66 , H01L23/00 , H01L25/00 , H01L25/065
Abstract: A structure of semiconductor device is provided, including a first circuit structure, formed on a first substrate. A first test pad is disposed on the first substrate. A second circuit structure is formed on a second substrate. A second test pad is disposed on the second substrate. A first bonding pad of the first circuit structure is bonded to a second bonding pad of the second circuit structure. One of the first test pad and the second test pad is an inner pad while another one of the first test pad and the second test pad is an outer pad, wherein the outer pad surrounds the inner pad.
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公开(公告)号:US20230101900A1
公开(公告)日:2023-03-30
申请号:US18077191
申请日:2022-12-07
Applicant: United Microelectronics Corp.
Inventor: Zhirui Sheng , Hui-Ling Chen , Chung-Hsing Kuo , Chun-Ting Yeh , Ming-Tse Lin , Chien En Hsu
IPC: H01L23/00 , H01L25/065 , H01L25/00 , H01L21/66
Abstract: A structure of semiconductor device is provided, including a first circuit structure, formed on a first substrate. A first test pad is disposed on the first substrate. A second circuit structure is formed on a second substrate. A second test pad is disposed on the second substrate. A first bonding pad of the first circuit structure is bonded to a second bonding pad of the second circuit structure. One of the first test pad and the second test pad is an inner pad while another one of the first test pad and the second test pad is an outer pad, wherein the outer pad surrounds the inner pad.
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