Invention Grant
- Patent Title: Thin film transistor, method for manufacturing the same and display apparatus comprising the same
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Application No.: US17123011Application Date: 2020-12-15
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Publication No.: US11557680B2Publication Date: 2023-01-17
- Inventor: Jaeman Jang , JungSeok Seo , PilSang Yun , InTak Cho
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Fenwick & West LLP
- Priority: KR10-2019-0176126 20191227
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/66 ; H01L29/786 ; H01L29/423

Abstract:
A thin film transistor, a method for manufacturing the same and a display apparatus comprising the same are disclosed, in which the thin film transistor comprises a semiconductor formed on a substrate, a gate insulating film formed on the semiconductor, a gate electrode formed on the gate insulating film, a first insulating film formed on the substrate, a first conductor portion formed on the first insulating film and formed at one side of the semiconductor, and a second conductor portion formed on the first insulating film and formed at another side of the semiconductor, wherein a first portion of the first insulating film may be formed between the semiconductor and the first conductor portion, and a second portion of the first insulating film may be formed between the semiconductor and the second conductor portion.
Public/Granted literature
- US20210202760A1 Thin Film Transistor, Method for Manufacturing the Same and Display Apparatus Comprising the Same Public/Granted day:2021-07-01
Information query
IPC分类: