公开(公告)号：US11777037B2

公开(公告)日：2023-10-03

申请号：US17510066

申请日：2021-10-25

Applicant: LG DISPLAY CO., LTD.

Inventor： InTak Cho ,  JungSeok Seo ,  SeHee Park ,  Jaeyoon Park ,  SangYun Sung

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/10

CPC classification number: H01L29/78642 ,  H01L27/1225 ,  H01L29/1037 ,  H01L29/78663

Abstract: A transistor having a vertical structure can include a substrate, a first electrode disposed on the substrate, a second electrode disposed on the substrate, an insulation pattern disposed between the first electrode and the second electrode, an active layer connected between the first electrode and the second electrode, a channel area of the active layer disposed along a side surface of the insulation pattern and around an upper edge of the insulation pattern, a gate electrode disposed on the active layer, and a gate insulating film disposed between the gate electrode and the active layer.

公开(公告)号：US11171246B2

公开(公告)日：2021-11-09

申请号：US16705767

申请日：2019-12-06

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  JungSeok Seo ,  PilSang Yun ,  Jeyong Jeon ,  Jaeyoon Park ,  ChanYong Jeong

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

公开(公告)号：US11476281B2

公开(公告)日：2022-10-18

申请号：US16521906

申请日：2019-07-25

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  JungSeok Seo ,  Jaeyoon Park ,  PilSang Yun ,  Jiyong Noh

IPC: H01L27/12 ,  H01L29/22

Abstract: An electronic device comprises a panel, a driving circuit configured to drive the panel, and a transistor disposed in the panel. The transistor includes a first insulation film on a substrate, an active layer disposed on the first insulation film, a second insulation film disposed on the active layer and the first insulation film to cover the active layer, the second insulation film having a thickness smaller than a thickness of the first insulation film, a source electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the source electrode overlapping an end of the active layer, and a drain electrode disposed on the second insulation film and spaced apart from the active layer by the second insulation film, the drain electrode overlapping another end of the active layer.

公开(公告)号：US10777772B2

公开(公告)日：2020-09-15

申请号：US16668262

申请日：2019-10-30

Applicant: LG Display Co., Ltd.

Inventor： Jiyong Noh ,  PilSang Yun ,  SeHee Park ,  JungSeok Seo

IPC: H01L51/52 ,  H01L27/12 ,  H01L27/32

Abstract: A panel comprises a substrate, a semiconductor layer on the substrate, and including an oxide semiconductor or a low-temperature polycrystalline silicon, an interlayer insulating film on the substrate and the semiconductor layer, a passivation layer on the interlayer insulating film, an overcoat layer on the passivation layer, a light emitting layer on the overcoat layer, and an encapsulation layer on the light emitting layer. The encapsulation layer includes an auxiliary encapsulation layer having at least one of a silicon nitride (SiNx:H) layer including hydrogen, a silicon oxide (SiO2:H) layer including hydrogen, or a silicon oxynitride (SiON:H) layer including hydrogen. At least one of the interlayer insulating film, the passivation layer, or the overcoat layer is a hydrogen trapping layer.

公开(公告)号：US11678518B2

公开(公告)日：2023-06-13

申请号：US17344903

申请日：2021-06-10

Applicant: LG Display Co., Ltd.

Inventor： JungSeok Seo ,  PilSang Yun ,  SeHee Park ,  Jiyong Noh

IPC: H10K59/121 ,  H10K59/131 ,  H01L27/12 ,  H10K59/12 ,  H01L27/32

CPC classification number: H01L27/3262 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1262 ,  H01L27/3276 ,  H01L2227/323

Abstract: A display device includes a substrate, a pixel driver on the substrate, and a display element connected to the pixel driver. The pixel driver includes a conductive layer on the substrate, a buffer layer on the conductive layer, a semiconductor layer on the buffer layer, a gate electrode, the gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode connected to the semiconductor layer. The buffer layer includes a flattened portion overlapping the conductive layer, and a stepped portion overlapping the periphery of the conductive layer. The semiconductor layer includes a first oxide semiconductor layer on the buffer layer, and a second oxide semiconductor layer on the first oxide semiconductor layer. A width of the first oxide semiconductor layer is larger than a width of the second oxide semiconductor layer, and the first oxide semiconductor layer is on the stepped portion of the buffer layer.

公开(公告)号：US11621356B2

公开(公告)日：2023-04-04

申请号：US17406994

申请日：2021-08-19

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  JungSeok Seo ,  PilSang Yun ,  Jeyong Jeon ,  Jaeyoon Park ,  ChanYong Jeong

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.

公开(公告)号：US11557680B2

公开(公告)日：2023-01-17

申请号：US17123011

申请日：2020-12-15

Applicant: LG Display Co., Ltd.

Inventor： Jaeman Jang ,  JungSeok Seo ,  PilSang Yun ,  InTak Cho

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/423

Abstract: A thin film transistor, a method for manufacturing the same and a display apparatus comprising the same are disclosed, in which the thin film transistor comprises a semiconductor formed on a substrate, a gate insulating film formed on the semiconductor, a gate electrode formed on the gate insulating film, a first insulating film formed on the substrate, a first conductor portion formed on the first insulating film and formed at one side of the semiconductor, and a second conductor portion formed on the first insulating film and formed at another side of the semiconductor, wherein a first portion of the first insulating film may be formed between the semiconductor and the first conductor portion, and a second portion of the first insulating film may be formed between the semiconductor and the second conductor portion.

公开(公告)号：US11574843B2

公开(公告)日：2023-02-07

申请号：US17124344

申请日：2020-12-16

Applicant: LG Display Co., Ltd.

Inventor： KyungChul Ok ,  JungSeok Seo ,  PilSang Yun ,  Jiyong Noh ,  Jaeman Jang ,  InTak Cho

IPC: H01L21/8234 ,  H01L27/32 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L27/12

Abstract: Disclosed is a thin film transistor, a method for manufacturing the same and a display apparatus comprising the same, wherein the thin film transistor includes a first insulating layer on a substrate, an active layer on the first insulating layer, and a gate electrode spaced apart from the active layer and configured to have at least a portion overlapped with the active layer, wherein the active layer has a single crystal structure of an oxide semiconductor material, and an upper surface of the first insulating layer which contacts the active layer is an oxygen (O) layer made of oxygen (O).

公开(公告)号：US11063103B2

公开(公告)日：2021-07-13

申请号：US16666869

申请日：2019-10-29

Applicant: LG Display Co., Ltd.

Inventor： JungSeok Seo ,  PilSang Yun ,  SeHee Park ,  Jiyong Noh

IPC: H01L27/32 ,  H01L27/12

Abstract: A display device includes a substrate, a pixel driver on the substrate, and a display element connected to the pixel driver. The pixel driver includes a conductive layer on the substrate, a buffer layer on the conductive layer, a semiconductor layer on the buffer layer, a gate electrode, the gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode connected to the semiconductor layer. The buffer layer includes a flattened portion overlapping the conductive layer, and a stepped portion overlapping the periphery of the conductive layer. The semiconductor layer includes a first oxide semiconductor layer on the buffer layer, and a second oxide semiconductor layer on the first oxide semiconductor layer. A width of the first oxide semiconductor layer is larger than a width of the second oxide semiconductor layer, and the first oxide semiconductor layer is on the stepped portion of the buffer layer.

公开(公告)号：US20200152913A1

公开(公告)日：2020-05-14

申请号：US16668262

申请日：2019-10-30

Applicant: LG Display Co., Ltd.

Inventor： Jiyong NOH ,  PilSang Yun ,  SeHee Park ,  JungSeok Seo

IPC: H01L51/52 ,  H01L27/12

Abstract: A panel comprises a substrate, a semiconductor layer on the substrate, and including an oxide semiconductor or a low-temperature polycrystalline silicon, an interlayer insulating film on the substrate and the semiconductor layer, a passivation layer on the interlayer insulating film, an overcoat layer on the passivation layer, a light emitting layer on the overcoat layer, and an encapsulation layer on the light emitting layer. The encapsulation layer includes an auxiliary encapsulation layer having at least one of a silicon nitride (SiNx:H) layer including hydrogen, a silicon oxide (SiO2:H) layer including hydrogen, or a silicon oxynitride (SiON:H) layer including hydrogen. At least one of the interlayer insulating film, the passivation layer, or the overcoat layer is a hydrogen trapping layer.