Invention Grant
- Patent Title: Storage device and interrupt generation method thereof
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Application No.: US17071411Application Date: 2020-10-15
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Publication No.: US11561914B2Publication Date: 2023-01-24
- Inventor: Hyunseok Cha , Sarath Kumar Kunnumpurathu Sivan , Jungsoo Ryoo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2015-0129396 20150914
- Main IPC: G06F13/24
- IPC: G06F13/24 ; G06F3/06

Abstract:
An interrupt generation method of a storage device includes executing a command provided by a host, writing a completion entry in a completion queue of the host upon completing execution of the command, and issuing an interrupt corresponding to the completion entry to the host in response to at least one of a first interrupt generation condition, a second interrupt generation condition, and a third interrupt generation condition being satisfied. The first interrupt generation condition is satisfied when a difference between a tail pointer and a head pointer of the completion queue is equal to a first mismatch value. The second interrupt generation condition is satisfied when the difference between the tail pointer and the head pointer is at least equal to an aggregation threshold. The third interrupt generation condition is satisfied when an amount of time that has elapsed since a previous interrupt was issued exceeds a reference time.
Public/Granted literature
- US20210049120A1 STORAGE DEVICE AND INTERRUPT GENERATION METHOD THEREOF Public/Granted day:2021-02-18
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