Invention Grant
- Patent Title: Power semiconductor module and method of forming the same
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Application No.: US17630091Application Date: 2020-07-23
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Publication No.: US11562911B2Publication Date: 2023-01-24
- Inventor: Daniele Torresin , Thomas Gradinger , Juergen Schuderer
- Applicant: Hitachi Energy Switzerland AG
- Applicant Address: CH Baden
- Assignee: Hitachi Energy Switzerland AG
- Current Assignee: Hitachi Energy Switzerland AG
- Current Assignee Address: CH Baden
- Agency: Slater Matsil, LLP
- Priority: EP19188379 20190725
- International Application: PCT/EP2020/070855 WO 20200723
- International Announcement: WO2021/013956 WO 20210128
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/367 ; H01L23/473 ; H01L23/10
Abstract:
One embodiment provides a method of providing a power semiconductor module with a cooler. A power semiconductor module includes a substrate having a first substrate side for carrying at least one electric circuit and having a second substrate side being located opposite to the first substrate side. The second substrate side is connected to a first baseplate side and the baseplate also includes a second baseplate side being located opposite to its first baseplate side and being adapted for coming in contact with the cooler. The cooler includes a first casing component and a second casing component. The baseplate side is equipped with a cooling area that is surrounded by a connecting area.
Public/Granted literature
- US20220254654A1 Power Semiconductor Module and Method of Forming the Same Public/Granted day:2022-08-11
Information query
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