Invention Grant
- Patent Title: Method of manufacturing thin film transistor and display device including polishing capping layer coplanar with active layer
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Application No.: US17348188Application Date: 2021-06-15
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Publication No.: US11563126B2Publication Date: 2023-01-24
- Inventor: Kohei Ebisuno , Sungjun Kim , Donghyun Son , Jaesoo Jung , Sunghoon Moon , Jingoo Jung
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin-si
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2018-0156282 20181206
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/32 ; H01L27/12 ; H01L21/02 ; H01L21/306 ; H01L29/66
Abstract:
A thin film transistor includes an active layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, a capping layer filling a thickness difference between the first portion and the second portion and arranged on the first portion, a gate insulating layer arranged on the capping layer, a gate electrode on the active layer, wherein the gate insulating layer and the capping layer are disposed between the gate electrode and the active layer, and a source electrode and a drain electrode connected to the active layer.
Public/Granted literature
Information query
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