Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US16859959Application Date: 2020-04-27
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Publication No.: US11569133B2Publication Date: 2023-01-31
- Inventor: Ching-Ling Lin , Wen-An Liang , Chen-Ming Huang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201711262580.1 20171204
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/66 ; H01L29/78 ; H01L21/764 ; H01L27/088 ; H01L29/06
Abstract:
A semiconductor device includes a fin-shaped structure on a substrate, a gate structure on the fin-shaped structure and an interlayer dielectric (ILD) layer around the gate structure, and a single diffusion break (SDB) structure in the ILD layer and the fin-shaped structure. Preferably, the SDB structure includes a bottom portion and a top portion on the bottom portion, in which the top portion and the bottom portion include different widths.
Public/Granted literature
- US20200258788A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2020-08-13
Information query
IPC分类:
