Invention Grant
- Patent Title: Three-dimensional semiconductor memory devices
-
Application No.: US17005495Application Date: 2020-08-28
-
Publication No.: US11569261B2Publication Date: 2023-01-31
- Inventor: Jaehyun Yang , Bio Kim , Yujin Kim , Kyong-Won An , Sookyeom Yong , Junggeun Jee , Youngjun Cheon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2018-0112265 20180919
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/1157 ; H01L27/11556 ; H01L27/11524

Abstract:
A three-dimensional semiconductor memory device is provided. The device may include a first stack structure on a substrate including a cell array region and a connection region, a second stack structure on the first stack structure, a first vertical channel hole penetrating the first stack structure and partially exposing the substrate and a bottom surface of the second stack structure, on the cell array region, a second vertical channel hole penetrating the second stack structure and exposing the first vertical channel hole, on the cell array region, a bottom diameter of the second vertical channel hole being smaller than an top diameter of the first vertical channel hole, and a buffer pattern placed in the first vertical channel hole and adjacent to the bottom surface of the second stack structure.
Information query
IPC分类: