Invention Grant
- Patent Title: Power photodiode structures and devices
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Application No.: US17151109Application Date: 2021-01-15
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Publication No.: US11569398B2Publication Date: 2023-01-31
- Inventor: Drew W. Cardwell , Mark P. D'Evelyn
- Applicant: SLT Technologies, Inc
- Applicant Address: US CA Los Angeles
- Assignee: SLT Technologies, Inc
- Current Assignee: SLT Technologies, Inc
- Current Assignee Address: US CA Los Angeles
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L31/0216 ; H01L31/0224 ; H01L31/0304 ; G02B6/42 ; H01L31/036 ; H01L31/109 ; H01L31/18 ; H01L31/0352

Abstract:
According to the present disclosure, techniques related to manufacturing and applications of power photodiode structures and devices based on group-III metal nitride and gallium-based substrates are provided. More specifically, embodiments of the disclosure include techniques for fabricating photodiode devices comprising one or more of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, structures and devices. Such structures or devices can be used for a variety of applications including optoelectronic devices, photodiodes, power-over-fiber receivers, and others.
Public/Granted literature
- US20210167231A1 POWER PHOTODIODE STRUCTURES AND DEVICES Public/Granted day:2021-06-03
Information query
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