Invention Grant
- Patent Title: Manufacturable laser diode formed on c-plane gallium and nitrogen material
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Application No.: US17143912Application Date: 2021-01-07
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Publication No.: US11569637B2Publication Date: 2023-01-31
- Inventor: Melvin McLaurin , James W. Raring , Alexander Sztein , Po Shan Hsu
- Applicant: KYOCERA SLD Laser, Inc.
- Applicant Address: US CA Goleta
- Assignee: KYOCERA SLD Laser, Inc.
- Current Assignee: KYOCERA SLD Laser, Inc.
- Current Assignee Address: US CA Goleta
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01S5/22
- IPC: H01S5/22 ; H01S5/343 ; H01S5/02 ; H01S5/20 ; H01S5/32 ; H01S5/00 ; H01S5/40 ; H01S5/02325 ; H01S5/02345

Abstract:
A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.
Public/Granted literature
- US20210226421A1 MANUFACTURABLE LASER DIODE FORMED ON C-PLANE GALLIUM AND NITROGEN MATERIAL Public/Granted day:2021-07-22
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