公开(公告)号：US20230238777A1

公开(公告)日：2023-07-27

申请号：US18095891

申请日：2023-01-11

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01S5/343 ,  H01S5/22 ,  H01S5/02 ,  H01S5/20 ,  H01S5/32 ,  H01S5/00

CPC classification number: H01S5/34333 ,  H01S5/22 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/2081 ,  H01S5/3211 ,  H01S5/32025 ,  H01S5/3202 ,  H01S5/0087 ,  H01S5/2009 ,  H01S5/4043

Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

公开(公告)号：US11710944B2

公开(公告)日：2023-07-25

申请号：US17477016

申请日：2021-09-16

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  Eric Goutain ,  James W. Raring ,  Paul Rudy ,  Vlad Novotny

IPC: H01S5/0234 ,  H01L23/00 ,  H01S5/40 ,  H01L33/00 ,  H01S5/323 ,  H01S5/02 ,  H01S5/22

CPC classification number: H01S5/4093 ,  H01L24/83 ,  H01L24/95 ,  H01L33/0045 ,  H01L33/0075 ,  H01S5/0203 ,  H01S5/0217 ,  H01S5/0234 ,  H01S5/32341 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/16152 ,  H01S5/0216 ,  H01S5/2201 ,  H01S5/4025 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2224/48465 ,  H01L2224/48091 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/45099

Abstract: A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.

公开(公告)号：US11139634B1

公开(公告)日：2021-10-05

申请号：US16786551

申请日：2020-02-10

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring ,  Hua Huang ,  Phillip Skahan ,  Sang-Ho Oh ,  Ben Yonkee ,  Alexander Sztein ,  Qiyuan Wei

IPC: H01S5/028 ,  H01S5/343 ,  H01S5/042 ,  H01S5/02 ,  H01S5/32 ,  H01S5/22 ,  H01S5/20

Abstract: Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.

公开(公告)号：US11862939B1

公开(公告)日：2024-01-02

申请号：US17843104

申请日：2022-06-17

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Paul Rudy ,  Po Shan Hsu ,  Alexander Sztein

IPC: H01S5/343 ,  H01S5/02 ,  H01S5/323 ,  H01S5/22 ,  H01S5/042 ,  H01S5/0234 ,  H01S5/20 ,  H01S5/30

CPC classification number: H01S5/34333 ,  H01S5/021 ,  H01S5/0206 ,  H01S5/0213 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0218 ,  H01S5/0234 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/222 ,  H01S5/2214 ,  H01S5/32308 ,  H01S5/04253 ,  H01S5/04254 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/30 ,  H01S2301/173 ,  H01S2302/00

Abstract: An intermediate ultraviolet laser diode device includes a gallium and nitrogen containing substrate member comprising a surface region, a release material overlying the surface region, an n-type gallium and nitrogen containing material; an active region overlying the n-type gallium and nitrogen containing material; a p-type gallium and nitrogen containing material; a first transparent conductive oxide material overlying the p-type gallium and nitrogen containing material; and an interface region overlying the first transparent conductive oxide material.

公开(公告)号：US11658456B2

公开(公告)日：2023-05-23

申请号：US17318896

申请日：2021-05-12

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Dan Steigerwald ,  Melvin McLaurin ,  Eric Goutain ,  Alexander Sztein ,  Po Shan Hsu ,  Paul Rudy ,  James W. Raring

IPC: H01S5/22 ,  H01S5/00 ,  H01S5/40 ,  H01S5/343 ,  H01S5/02 ,  H01S5/042

CPC classification number: H01S5/0087 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0218 ,  H01S5/04253 ,  H01S5/04256 ,  H01S5/22 ,  H01S5/34333 ,  H01S5/4012 ,  H01S5/4031 ,  H01S5/4087 ,  H01S5/4093 ,  H01S5/005 ,  H01S5/0217 ,  H01S5/04257 ,  H01S5/4056

Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.

公开(公告)号：US11139637B2

公开(公告)日：2021-10-05

申请号：US16844299

申请日：2020-04-09

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  Eric Goutain ,  James W. Raring ,  Paul Rudy ,  Vlad Novotny

IPC: H01S5/0234 ,  H01S5/40 ,  H01L33/00 ,  H01S5/323 ,  H01L23/00 ,  H01S5/02 ,  H01S5/22

Abstract: A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.

公开(公告)号：US11088505B2

公开(公告)日：2021-08-10

申请号：US16876569

申请日：2020-05-18

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

IPC: H01S5/02 ,  H01S5/343 ,  H01S5/32 ,  H01S5/0234

Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.

公开(公告)号：US20240120435A1

公开(公告)日：2024-04-11

申请号：US17962379

申请日：2022-10-07

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring ,  Alexander Sztein ,  Nicholas J. Pfister

IPC: H01L33/00 ,  H01L25/075

CPC classification number: H01L33/0075 ,  H01L25/0753 ,  H01L33/0093

Abstract: Methods for manufacturing LED display panel devices include providing donor wafers having LED die configured to emit different color emissions. At least some of the LED die are selectively transferred from the donor wafers to a carrier wafer such that the carrier wafer is configured with different color emitting LEDs. The different color LEDs may include red-green-blue LEDs to form a RGB display panel.

公开(公告)号：US11948980B1

公开(公告)日：2024-04-02

申请号：US17897765

申请日：2022-08-29

Applicant: KYOCERA SLD Laser, Inc.

Inventor： James W. Raring ,  Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu

IPC: H01L29/205 ,  H01L21/02 ,  H01L21/311 ,  H01L21/683 ,  H01L21/8252 ,  H01L23/00 ,  H01L27/06 ,  H01L27/088 ,  H01L27/12 ,  H01L27/15 ,  H01L29/66 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/02 ,  H01S5/227 ,  H01S5/343 ,  H01L27/085 ,  H01L29/423

CPC classification number: H01L29/205 ,  H01L21/02458 ,  H01L21/311 ,  H01L21/6835 ,  H01L21/8252 ,  H01L24/00 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/0676 ,  H01L27/088 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/15 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/66318 ,  H01L29/66462 ,  H01L29/66916 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0093 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0203 ,  H01S5/0217 ,  H01S5/227 ,  H01S5/34333 ,  H01L27/085 ,  H01L29/4236

Abstract: A method for manufacturing a display panel comprising light emitting device including micro LEDs includes providing multiple donor wafers having a surface region and forming an epitaxial material overlying the surface region. The epitaxial material includes an n-type region, an active region comprising at least one light emitting layer overlying the n-type region, and a p-type region overlying the active layer region. The multiple donor wafers are configured to emit different color emissions. The epitaxial material on the multiple donor wafers is patterned to form a plurality of dice, characterized by a first pitch between a pair of dice less than a design width. At least some of the dice are selectively transferred from the multiple donor wafers to a common carrier wafer such that the carrier wafer is configured with different color emitting LEDs. The different color LEDs could comprise red-green-blue LEDs to form a RGB display panel.

公开(公告)号：US20220006256A1

公开(公告)日：2022-01-06

申请号：US17377835

申请日：2021-07-16

Applicant: KYOCERA SLD Laser, Inc.

Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

IPC: H01S5/02 ,  H01S5/343 ,  H01S5/32 ,  H01S5/0234

Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.