Invention Grant
- Patent Title: Aluminum nitride film, method of manufacturing aluminum nitride film, and high withstand voltage component
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Application No.: US17335466Application Date: 2021-06-01
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Publication No.: US11572275B2Publication Date: 2023-02-07
- Inventor: Atsushi Yumoto , Mari Shimizu , Tetsuo Inoue , Takashi Hino , Shuichi Saito
- Applicant: SHIBAURA INSTITUTE OF TECHNOLOGY , TOSHIBA MATERIALS CO., LTD.
- Applicant Address: JP Tokyo; JP Yokohama
- Assignee: SHIBAURA INSTITUTE OF TECHNOLOGY,TOSHIBA MATERIALS CO., LTD.
- Current Assignee: SHIBAURA INSTITUTE OF TECHNOLOGY,TOSHIBA MATERIALS CO., LTD.
- Current Assignee Address: JP Tokyo; JP Yokohama
- Agency: Foley & Lardner LLP
- Priority: JPJP2016-044525 20160308
- Main IPC: C01B21/072
- IPC: C01B21/072 ; H01L21/67 ; H01L23/373 ; H05B3/12 ; C23C14/06 ; C23C26/00 ; C23C24/04 ; C23C14/28 ; H05B3/06 ; H05B3/84
Abstract:
An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.
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