Invention Grant
- Patent Title: Three-dimensional transmon qubit apparatus
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Application No.: US16916832Application Date: 2020-06-30
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Publication No.: US11574229B2Publication Date: 2023-02-07
- Inventor: Jaehyeong Lee , Hyeokshin Kwon , Insu Jeon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2020-0004946 20200114
- Main IPC: G06N10/00
- IPC: G06N10/00 ; H01L27/18

Abstract:
Provided is a three-dimensional (3D) transmon qubit apparatus including a body portion, a driver, a transmon element disposed in an internal space of the body portion, a first tunable cavity module disposed in the internal space of the body, and comprising a first superconductive metal panel; and a second tunable cavity module disposed in the internal space of the body, and comprising a second superconductive metal panel, wherein the transmon element is disposed between the first superconductive metal panel and the second superconductive metal panel; wherein the first tunable cavity module and the second tunable cavity module are configured to adjust a distance between the first superconductive metal panel and the second superconductive metal panel, and wherein the driver is configured to tune a resonance frequency by adjusting a 3D cavity by adjusting the distance between the first superconductive metal panel and the second superconductive metal panel.
Public/Granted literature
- US20210216899A1 THREE-DIMENSIONAL TRANSMON QUBIT APPARATUS Public/Granted day:2021-07-15
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