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公开(公告)号：US20220271212A1
公开(公告)日：2022-08-25
申请号：US17555812
申请日：2021-12-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Taehwan Jang , Hyeokshin Kwon , Jaeho Shin , Jaehyeong Lee , Insu Jeon , Sungho Han
Abstract: A multi-mode resonator is provided. The multi-mode resonator includes a housing and a cavity disposed in the housing, wherein the cavity includes a main cavity and a plurality of first subcavities disposed on a first lateral side of the main cavity.
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公开(公告)号：US12062826B2
公开(公告)日：2024-08-13
申请号：US17515055
申请日：2021-10-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jaehyeong Lee , Hyeokshin Kwon , Jaeho Shin , Taehwan Jang , Insu Jeon
Abstract: A qubit memory of a quantum computer is provided. The qubit memory according to an embodiment includes a first readout unit, a first transmon, and a first data storage unit storing quantum information, and the first data storage unit includes a first superconducting waveguide layer, an insulating layer, and a superconductor layer sequentially stacked on a substrate. In one example, the first superconducting waveguide layer may include a superconducting resonator.
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Patent Agency Ranking
公开(公告)号：US20240099161A1
公开(公告)日：2024-03-21
申请号：US18116681
申请日：2023-03-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaehyeong Lee , Jinhyoun Kang , Jaeho Shin , Daeseok Han
CPC classification number: H10N60/805 , H10N60/0912 , H10N60/12
Abstract: A Josephson junction device and a method of manufacturing the Josephson junction device are disclosed. The Josephson junction device includes a substrate having a top surface and a trench recessed below the first surface, wherein sidewalls of the substrate define sidewalls of the trench; a first superconducting electrode formed on the top surface of the substrate with sidewalls further defining the sidewalls of the trench; a tunneling thin film formed over the sidewalls of the substrate and over the sidewalls of the first superconducting electrode; and a second superconducting electrode formed in the trench in contact with the tunneling thin film and with top surface above the top surface of the substrate, wherein a superconducting tunnel junction is formed between the first superconducting electrode and the second superconducting electrode through the tunneling thin film.
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公开(公告)号：US11574229B2
公开(公告)日：2023-02-07
申请号：US16916832
申请日：2020-06-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaehyeong Lee , Hyeokshin Kwon , Insu Jeon
Abstract: Provided is a three-dimensional (3D) transmon qubit apparatus including a body portion, a driver, a transmon element disposed in an internal space of the body portion, a first tunable cavity module disposed in the internal space of the body, and comprising a first superconductive metal panel; and a second tunable cavity module disposed in the internal space of the body, and comprising a second superconductive metal panel, wherein the transmon element is disposed between the first superconductive metal panel and the second superconductive metal panel; wherein the first tunable cavity module and the second tunable cavity module are configured to adjust a distance between the first superconductive metal panel and the second superconductive metal panel, and wherein the driver is configured to tune a resonance frequency by adjusting a 3D cavity by adjusting the distance between the first superconductive metal panel and the second superconductive metal panel.
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公开(公告)号：US20240363989A1
公开(公告)日：2024-10-31
申请号：US18770206
申请日：2024-07-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jaehyeong Lee , Hyeokshin Kwon , Jaeho Shin , Taehwan Jang , Insu Jeon
Abstract: A qubit memory of a quantum computer is provided. The qubit memory according to an embodiment includes a first readout unit, a first transmon, and a first data storage unit storing quantum information, and the first data storage unit includes a first superconducting waveguide layer, an insulating layer, and a superconductor layer sequentially stacked on a substrate. In one example, the first superconducting waveguide layer may include a superconducting resonator.
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公开(公告)号：US11812672B2
公开(公告)日：2023-11-07
申请号：US17227661
申请日：2021-04-12
Applicant: Samsung Electronics Co., Ltd
Inventor： Hyeokshin Kwon , Jaehyeong Lee , Insu Jeon
CPC classification number: H10N60/12 , G06N10/00 , H10N60/805
Abstract: Provided is a quantum computing device and system. The quantum computing device includes a first qubit chip, a readout cavity structure surrounding a first end part of the first qubit chip, and a storage cavity structure surrounding a second end part of the first qubit chip, wherein the first qubit chip includes a first readout antenna disposed within the readout cavity structure, a first storage antenna disposed in the storage cavity structure, and a first qubit element provided between the first readout antenna and the first storage antenna, and wherein the first qubit element is disposed between the readout cavity structure and the storage cavity structure.
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公开(公告)号：US11349059B2
公开(公告)日：2022-05-31
申请号：US17015512
申请日：2020-09-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaehyeong Lee , Hyeokshin Kwon
Abstract: A Josephson junction device includes a planar arrangement including a first two-dimensional (2D) material layer, a graphene layer, and a second 2D material layer planarly arranged on a device substrate, the first 2D material layer including at least one layer of a 2D material, the graphene layer forming a first junction with the first 2D material layer, and the second 2D material layer forming a second junction with the graphene layer and including at least one layer of a 2D material. A distance between the first junction and the second junction is within a range configured to cause a Josephson effect.
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