Invention Grant
- Patent Title: Memory system
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Application No.: US17190638Application Date: 2021-03-03
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Publication No.: US11574686B2Publication Date: 2023-02-07
- Inventor: Hideki Yamada , Masanobu Shirakawa
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2020-146732 20200901
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/04 ; G11C16/08 ; H01L27/11556 ; G11C11/56

Abstract:
According to the one embodiment, a memory system includes a semiconductor memory device and a memory controller. The semiconductor memory device includes: first and second memory cells stacked above a substrate; a first word line coupled to the first and second memory cells; a first bit line coupled to the first memory cell; and a second bit line coupled to the second memory cell. A first state read operation includes a first read operation for reading data from the first memory cell and a second read operation for reading data from the second memory cell. A first read voltage is applied to the first word line during a first period for executing the first read operation, and a second read voltage is applied to the first word line during a second period for executing the second read operation.
Public/Granted literature
- US20220068402A1 MEMORY SYSTEM Public/Granted day:2022-03-03
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