Invention Grant
- Patent Title: Semiconductor device with a dielectric between portions
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Application No.: US16880684Application Date: 2020-05-21
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Publication No.: US11581232B2Publication Date: 2023-02-14
- Inventor: Jing-En Luan
- Applicant: STMicroelectronics PTE LTD
- Applicant Address: SG Singapore
- Assignee: STMicroelectronics PTE LTD
- Current Assignee: STMicroelectronics PTE LTD
- Current Assignee Address: SG Singapore
- Agency: Seed IP Law Group LLP
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L23/29 ; H01L23/31 ; H01L21/56 ; H01L25/065 ; H01L23/00 ; H01L21/78

Abstract:
A semiconductor device having a channel between active sections or portions of the device is disclosed. An elastic material, such as dielectric or a polymer, is deposited into the channel and cured to increase flexibility and thermal expansion properties of the semiconductor device. The elastic material reduces the thermal and mechanical mismatch between the semiconductor device and the substrate to which the semiconductor device is coupled in downstream processing to improve reliability. The semiconductor device may also include a plurality of channels formed transverse with respect to each other. Some of the channels extend all the way through the semiconductor device, while other channels extend only partially through the semiconductor device.
Public/Granted literature
- US20200381320A1 SEMICONDUCTOR DEVICE WITH A DIELECTRIC BETWEEN PORTIONS Public/Granted day:2020-12-03
Information query
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