Invention Grant
- Patent Title: Heat spreading layer integrated within a composite IC die structure and methods of forming the same
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Application No.: US17318887Application Date: 2021-05-12
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Publication No.: US11581238B2Publication Date: 2023-02-14
- Inventor: Shawna Liff , Adel Elsherbini , Johanna Swan , Jimin Yao , Veronica Strong
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Essential Patents Group, LLP.
- Main IPC: H01L23/373
- IPC: H01L23/373 ; H01L21/768 ; H01L25/065 ; H01L23/48

Abstract:
A heat spreading material is integrated into a composite die structure including a first IC die having a first dielectric material and a first electrical interconnect structure, and a second IC die having a second dielectric material and a second electrical interconnect structure. The composite die structure may include a composite electrical interconnect structure comprising the first interconnect structure in direct contact with the second interconnect structure at a bond interface. The heat spreading material may be within at least a portion of a dielectric area through which the bond interface extends. The heat spreading material may be located within one or more dielectric materials surrounding the composite interconnect structure, and direct a flow of heat generated by one or more of the first and second IC dies.
Public/Granted literature
- US20210280492A1 HEAT SPREADING LAYER INTEGRATED WITHIN A COMPOSITE IC DIE STRUCTURE AND METHODS OF FORMING THE SAME Public/Granted day:2021-09-09
Information query
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