Invention Grant
- Patent Title: Structure and method of advanced LCoS back-plane having robust pixel via metallization
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Application No.: US17100407Application Date: 2020-11-20
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Publication No.: US11586067B2Publication Date: 2023-02-21
- Inventor: Lan Yu , Benjamin D. Briggs , Tyler Sherwood , Raghav Sreenivasan
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: G02F1/1335
- IPC: G02F1/1335 ; G02F1/1362

Abstract:
Processing methods may be performed to form a pixel material in a semiconductor substrate. The methods may include forming a lithographic mask overlying the semiconductor substrate. The lithographic mask may include a window. The method may include forming a via in the semiconductor substrate by a dry etch process through the window. The method may also include forming the pixel material by depositing a fill material in the via.
Public/Granted literature
- US20220163845A1 STRUCTURE AND METHOD OF ADVANCED LCOS BACK-PLANE HAVING ROBUST PIXEL VIA METALLIZATION Public/Granted day:2022-05-26
Information query
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