- 专利标题： Forming metal plug through a hole in a device including a resistance layer and contacting embedded conductive structures
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申请号： US17037051申请日： 2020-09-29
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公开(公告)号： US11587848B2公开(公告)日： 2023-02-21
- 发明人: Yi Lu , Xiaohui Zhuang , Yihui Lin , Liang Wang , Le Li , Kaige Gao , Wenjie Zhu , Jialin Zhao
- 申请人： Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- 申请人地址： CN Shanghai; CN Beijing
- 专利权人： Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- 当前专利权人： Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- 当前专利权人地址： CN Shanghai; CN Beijing
- 代理机构： Anova Law Group, PLLC
- 优先权： CN202010018893.8 20200108
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/48 ; H01L21/768 ; H01L23/522
摘要：
Semiconductor structure and its fabrication method are provided. The method includes providing a substrate, where the substrate includes a first region having a first metal structure and a second region having a second metal structure; forming a device layer on each of top surfaces of the substrate, the first metal structure and the second metal structure; forming a first through hole in the device layer at the first region, where the first through hole exposes at least a portion of surfaces of the first metal structure, and forming a second through hole in the device layer at the second region, where the second through hole passes through the first device and exposes at least a portion of surfaces of the second metal structure; and using a selective metal growth process, forming a first plug in the first through hole and forming a second plug in the second through hole.
公开/授权文献
- US20210210412A1 SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF 公开/授权日：2021-07-08
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