公开(公告)号：US11587848B2

公开(公告)日：2023-02-21

申请号：US17037051

申请日：2020-09-29

申请人： Semiconductor Manufacturing International (Shanghai) Corporation ,  Semiconductor Manufacturing International (Beijing) Corporation

发明人： Yi Lu ,  Xiaohui Zhuang ,  Yihui Lin ,  Liang Wang ,  Le Li ,  Kaige Gao ,  Wenjie Zhu ,  Jialin Zhao

IPC分类号： H01L23/48 ,  H01L21/48 ,  H01L21/768 ,  H01L23/522

摘要： Semiconductor structure and its fabrication method are provided. The method includes providing a substrate, where the substrate includes a first region having a first metal structure and a second region having a second metal structure; forming a device layer on each of top surfaces of the substrate, the first metal structure and the second metal structure; forming a first through hole in the device layer at the first region, where the first through hole exposes at least a portion of surfaces of the first metal structure, and forming a second through hole in the device layer at the second region, where the second through hole passes through the first device and exposes at least a portion of surfaces of the second metal structure; and using a selective metal growth process, forming a first plug in the first through hole and forming a second plug in the second through hole.