Invention Grant
- Patent Title: High density pillar interconnect conversion with stack to substrate connection
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Application No.: US17383304Application Date: 2021-07-22
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Publication No.: US11587912B2Publication Date: 2023-02-21
- Inventor: Owen R. Fay , Kyle K. Kirby , Akshay N. Singh
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/498 ; H01L21/56 ; H01L23/31 ; H01L21/60
Abstract:
A semiconductor device assembly can include a first semiconductor device and an interposer. The interposer can include a substrate and through vias in which individual vias include an exposed portion and an embedded portion, the exposed portions projecting from one or both of the first surface and the second surface of the substrate, and the embedded portions extending through at least a portion of the substrate. The interposer can include one or more test pads, a first electrical contact, and a second electrical contact. The semiconductor device assembly can include a controller positioned on an opposite side of the interposer from the first semiconductor device and operably coupled to the interposer via connection to the second electrical contact.
Public/Granted literature
- US20210351163A1 HIGH DENSITY PILLAR INTERCONNECT CONVERSION WITH STACK TO SUBSTRATE CONNECTION Public/Granted day:2021-11-11
Information query
IPC分类:
