Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US16880230Application Date: 2020-05-21
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Publication No.: US11587929B2Publication Date: 2023-02-21
- Inventor: Hui-Jung Kim , Taehyun An , Kiseok Lee , Keunnam Kim , Yoosang Hwang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2019-0095029 20190805
- Main IPC: H01L27/108
- IPC: H01L27/108 ; G11C5/06

Abstract:
A semiconductor memory device includes a stack including a plurality of layers vertically stacked on a substrate, each of the layers including a bit line extending in a first direction and a semiconductor pattern extending from the bit line in a second direction crossing the first direction, a gate electrode along each of the semiconductor patterns stacked, a vertical insulating layer on the gate electrode, a stopper layer, and a data storing element electrically connected to each of the semiconductor patterns. The data storing element includes a first electrode electrically connected to each of the semiconductor patterns, a second electrode on the first electrode, and a dielectric layer between the first and second electrodes. The stopper layer is between the vertical insulating layer and the second electrode.
Public/Granted literature
- US20210043629A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2021-02-11
Information query
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