Invention Grant
- Patent Title: Power storage element, manufacturing method thereof, and power storage device
-
Application No.: US17329266Application Date: 2021-05-25
-
Publication No.: US11587959B2Publication Date: 2023-02-21
- Inventor: Kazutaka Kuriki , Ryota Tajima , Tamae Moriwaka
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Fish & Richardson P.C.
- Priority: JP2012-069536 20120326
- Main IPC: H01M10/0565
- IPC: H01M10/0565 ; H01M10/052 ; H01M10/0562 ; H01M10/0585 ; H01L27/13 ; H01G11/46 ; H01G11/56 ; H01G11/08 ; H01G11/84 ; H01L27/12 ; H01L29/24 ; H01L29/66 ; H01L29/786

Abstract:
Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane and can be formed through a simple process. The power storage element further includes a positive electrode active material layer on the positive electrode current collector layer; a negative electrode active material layer on the negative electrode current collector layer; and a solid electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer. The positive electrode active material layer and the negative electrode active material layer are formed by oxidation treatment.
Public/Granted literature
- US20210280616A1 POWER STORAGE ELEMENT, MANUFACTURING METHOD THEREOF, AND POWER STORAGE DEVICE Public/Granted day:2021-09-09
Information query