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34 条记录 (耗时 0.027 秒)

    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10217752B2

    公开(公告)日：2019-02-26

    申请号：US15591150

    申请日：2017-05-10

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Tomoaki Atsumi ,  Shuhei Nagatsuka ,  Tamae Moriwaka ,  Yuta Endo

    IPC分类号： H01L29/10 ,  H01L27/115 ,  H01L29/786 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/06 ,  G11C7/16 ,  G11C8/14 ,  G11C11/403 ,  G11C11/408 ,  G11C11/24 ,  H01L29/24

    摘要： [Problem] To provide a semiconductor device suitable for miniaturization. To provide a highly reliable semiconductor device. To provide a semiconductor device with improved operating speed.[Solving Means] A semiconductor device including a memory cell including first to cth (c is a natural number of 2 or more) sub memory cells, wherein: the jth sub memory cell includes a first transistor, a second transistor, and a capacitor; a first semiconductor layer included in the first transistor and a second semiconductor layer included in the second transistor include an oxide semiconductor; one of terminals of the capacitor is electrically connected to a gate electrode included in the second transistor; the gate electrode included in the second transistor is electrically connected to one of a source electrode and a drain electrode which are included in the first transistor; and when j≥2, the jth sub memory cell is arranged over the j−1th sub memory cell.

    SECONDARY BATTERY
    5.
    发明申请
    SECONDARY BATTERY 审中-公开
    二次电池

    公开(公告)号：US20140023920A1

    公开(公告)日：2014-01-23

    申请号：US13940287

    申请日：2013-07-12

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Shunpei YAMAZAKI ,  Teppei Oguni ,  Tamae Moriwaka ,  Junpei Momo ,  Ryota Tajima ,  Nobuhiro Inoue

    IPC分类号： H01M4/133

    CPC分类号： H01M4/133 ,  H01M4/587

    摘要： A secondary battery in which graphite that is an active material can occlude and release lithium efficiently is provided. Further, a highly reliable secondary battery in which the amount of lithium inserted and extracted into/from graphite that is an active material is prevented from varying is provided. The secondary battery includes a negative electrode including a current collector and graphite provided over the current collector, and a positive electrode. The graphite includes a plurality of graphene layers. Surfaces of the plurality of graphene layers are provided substantially along the direction of an electric field generated between the positive electrode and the negative electrode.

    摘要翻译： 提供了作为活性物质的石墨能够有效地吸留和释放锂的二次电池。 此外，提供了一种高可靠性的二次电池，其中防止插入和从石墨中提取的作为活性材料的锂的量变化。 二次电池包括设置在集电体上方的集电体和石墨的负极和正极。 石墨包括多个石墨烯层。 基本上沿着在正极和负极之间产生的电场的方向设置多个石墨烯层的表面。

    Semicondutor device
    7.
    发明授权
    Semicondutor device 有权

    公开(公告)号：US10593683B2

    公开(公告)日：2020-03-17

    申请号：US16275380

    申请日：2019-02-14

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Tomoaki Atsumi ,  Shuhei Nagatsuka ,  Tamae Moriwaka ,  Yuta Endo

    IPC分类号： H01L29/10 ,  H01L27/115 ,  H01L29/786 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/06 ,  G11C7/16 ,  G11C8/14 ,  G11C11/403 ,  G11C11/408 ,  G11C11/24 ,  H01L29/24

    摘要： [Problem] To provide a semiconductor device suitable for miniaturization. To provide a highly reliable semiconductor device. To provide a semiconductor device with improved operating speed.[Solving Means] A semiconductor device including a memory cell including first to cth (c is a natural number of 2 or more) sub memory cells, wherein: the jth sub memory cell includes a first transistor, a second transistor, and a capacitor; a first semiconductor layer included in the first transistor and a second semiconductor layer included in the second transistor include an oxide semiconductor; one of terminals of the capacitor is electrically connected to a gate electrode included in the second transistor; the gate electrode included in the second transistor is electrically connected to one of a source electrode and a drain electrode which are included in the first transistor; and when j≥2, the jth sub memory cell is arranged over the j-1th sub memory cell.

    Lithium ion secondary battery and method for manufacturing the same
    8.
    发明授权
    Lithium ion secondary battery and method for manufacturing the same 有权

    公开(公告)号：US10566649B2

    公开(公告)日：2020-02-18

    申请号：US15608439

    申请日：2017-05-30

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Tomoya Futamura ,  Tamae Moriwaka ,  Takahiro Kawakami ,  Junpei Momo ,  Nobuhiro Inoue

    IPC分类号： H01M10/0525 ,  H01M4/136 ,  H01M4/58 ,  H01M4/13 ,  H01M4/36 ,  H01M4/66 ,  H01M4/02 ,  C30B1/00

    摘要： A lithium ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer over the positive electrode current collector. The positive electrode active material layer includes a plurality of lithium-containing, composite oxides each of which is expressed by LiMPO4 (M is one or more of Fe (II), Mn (II), Co (II), and Ni (II)) that is a general formula. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. The lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with the surface of the positive electrode current collector.