Invention Grant
- Patent Title: Bipolar junction transistor with constricted collector region having high gain and early voltage product
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Application No.: US17540428Application Date: 2021-12-02
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Publication No.: US11588019B2Publication Date: 2023-02-21
- Inventor: Alexei Sadovnikov , Natalia Lavrovskaya
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L21/82 ; H01L29/732 ; H01L29/10 ; H01L29/66 ; H01L27/06 ; H01L21/8249 ; H01L21/265 ; H01L21/266 ; H01L29/36
Abstract:
A semiconductor device includes a bipolar junction transistor having a collector, a base, and an emitter. The collector includes a current collection region, a constriction region laterally adjacent to the current collection region, and a contact region laterally adjacent to the constriction region, located opposite from the current collection region. The current collection region, the constriction region laterally, and the contact region all have the same conductivity type. The base includes a current transmission region contacting the current collection region and a constricting well laterally adjacent to, and contacting, the current transmission region and contacting the constriction region. The current transmission region and the constricting well have an opposite conductivity type than the current collection region, the constriction region laterally, and the contact region.
Public/Granted literature
- US20220093737A1 BIPOLAR JUNCTION TRANSISTOR WITH CONSTRICTED COLLECTOR REGION HAVING HIGH GAIN AND EARLY VOLTAGE PRODUCT Public/Granted day:2022-03-24
Information query
IPC分类:
