- 专利标题： Bipolar transistor with elevated extrinsic base and methods to form same
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申请号： US17229950申请日： 2021-04-14
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公开(公告)号： US11588043B2公开(公告)日： 2023-02-21
- 发明人: Viorel C. Ontalus , Judson R. Holt
- 申请人： GLOBALFOUNDRIES U.S. Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： GLOBALFOUNDRIES U.S. Inc.
- 当前专利权人： GLOBALFOUNDRIES U.S. Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Hoffman Warnick LLC
- 代理商 Francois Pagette
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/732 ; H01L29/66 ; H01L29/161 ; H01L29/167 ; H01L29/10
摘要：
Aspects of the disclosure provide a bipolar transistor structure with an elevated extrinsic base, and related methods to form the same. A bipolar transistor according to the disclosure may include a collector on a substrate, and a base film on the collector. The base film includes a crystalline region on the collector and a non-crystalline region adjacent the crystalline region. An emitter is on a first portion of the crystalline region of the base film. An elevated extrinsic base is on a second portion of the crystalline region of the base film, and adjacent the emitter.