公开(公告)号：US20210202722A1

公开(公告)日：2021-07-01

申请号：US16728172

申请日：2019-12-27

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Viorel C. Ontalus

IPC: H01L29/739 ,  H01L29/165 ,  H01L29/06 ,  H01L29/10 ,  H01L21/02 ,  H01L29/66

Abstract: Embodiments of the disclosure provide an insulated-gate bipolar transistor (IGBT), including: a substrate with a first type of doping; a drift region including a first semiconductor material and a second semiconductor material having dissimilar band gaps, the drift region having a second type of doping; and a base region with the first type of doping, wherein the drift region is disposed between the substrate and the base region; wherein a stoichiometry ratio of the first and second semiconductor materials of the drift region varies as a function of distance within the drift region to provide a built-in electric field via band gap modulation. The built-in electric field reduces a band gap barrier for minority charge carriers and increases a drift velocity of the minority charge carriers in the drift region, increasing a frequency response of the IGBT.

公开(公告)号：US11728380B2

公开(公告)日：2023-08-15

申请号：US17356633

申请日：2021-06-24

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Viorel C. Ontalus

IPC: H01L29/10 ,  H01L29/732 ,  H01L29/08 ,  H01L27/082

CPC classification number: H01L29/1004 ,  H01L27/0823 ,  H01L29/0821 ,  H01L29/732

Abstract: Aspects of the disclosure provide a bipolar transistor structure with a sub-collector on a substrate, a first collector region on a first portion of the sub-collector, a trench isolation (TI) on a second portion of the sub-collector and adjacent the first collector region, and a second collector region on a third portion of the sub-collector and adjacent the TI. A base on first collector region and a portion of the TI. An emitter is on a first portion of the base above the first collector region. The base includes a second portion horizontally displaced from the emitter in a first horizontal direction, and horizontally displaced from the second collector region in a second horizontal direction orthogonal to the first horizontal direction.

公开(公告)号：US20220416029A1

公开(公告)日：2022-12-29

申请号：US17356633

申请日：2021-06-24

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Viorel C. Ontalus

IPC: H01L29/10 ,  H01L27/082 ,  H01L29/08 ,  H01L29/732

Abstract: Aspects of the disclosure provide a bipolar transistor structure with a sub-collector on a substrate, a first collector region on a first portion of the sub-collector, a trench isolation (TI) on a second portion of the sub-collector and adjacent the first collector region, and a second collector region on a third portion of the sub-collector and adjacent the TI. A base on first collector region and a portion of the TI. An emitter is on a first portion of the base above the first collector region. The base includes a second portion horizontally displaced from the emitter in a first horizontal direction, and horizontally displaced from the second collector region in a second horizontal direction orthogonal to the first horizontal direction.

公开(公告)号：US11588043B2

公开(公告)日：2023-02-21

申请号：US17229950

申请日：2021-04-14

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Viorel C. Ontalus ,  Judson R. Holt

IPC: H01L29/06 ,  H01L29/732 ,  H01L29/66 ,  H01L29/161 ,  H01L29/167 ,  H01L29/10

Abstract: Aspects of the disclosure provide a bipolar transistor structure with an elevated extrinsic base, and related methods to form the same. A bipolar transistor according to the disclosure may include a collector on a substrate, and a base film on the collector. The base film includes a crystalline region on the collector and a non-crystalline region adjacent the crystalline region. An emitter is on a first portion of the crystalline region of the base film. An elevated extrinsic base is on a second portion of the crystalline region of the base film, and adjacent the emitter.

公开(公告)号：US20220336646A1

公开(公告)日：2022-10-20

申请号：US17229950

申请日：2021-04-14

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Viorel C. Ontalus ,  Judson R. Holt

IPC: H01L29/732 ,  H01L29/06 ,  H01L29/10 ,  H01L29/161 ,  H01L29/167 ,  H01L29/66

Abstract: Aspects of the disclosure provide a bipolar transistor structure with an elevated extrinsic base, and related methods to form the same. A bipolar transistor according to the disclosure may include a collector on a substrate, and a base film on the collector. The base film includes a crystalline region on the collector and a non-crystalline region adjacent the crystalline region. An emitter is on a first portion of the crystalline region of the base film. An elevated extrinsic base is on a second portion of the crystalline region of the base film, and adjacent the emitter.