Invention Grant
- Patent Title: PECVD tungsten containing hardmask films and methods of making
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Application No.: US16679698Application Date: 2019-11-11
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Publication No.: US11594415B2Publication Date: 2023-02-28
- Inventor: Susmit Singha Roy , Pramit Manna , Rui Cheng , Abhijit Basu Mallick
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/02 ; H01L21/3205 ; H01L21/768
Abstract:
Methods of forming a tungsten film comprising forming a boron seed layer on an oxide surface, an optional tungsten initiation layer on the boron seed layer and a tungsten containing film on the boron seed layer or tungsten initiation layer are described. Film stack comprising a boron seed layer on an oxide surface with an optional tungsten initiation layer and a tungsten containing film are also described.
Public/Granted literature
- US20200075333A1 PECVD Tungsten Containing Hardmask Films And Methods Of Making Public/Granted day:2020-03-05
Information query
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