Semiconductor device and method of manufacturing the same
Abstract:
An interlayer insulating film has via holes. A sidewall conductive layer is arranged along a sidewall surface of one via hole and contains one or more kinds selected from a group including tungsten, titanium, titanium nitride, tantalum and molybdenum. A second metal wiring layer is embedded in one via hole and contains aluminum. A plug layer is embedded in the other via hole and contains one or more kinds selected from the group including tungsten, titanium, titanium nitride, tantalum and molybdenum.
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