Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US16668802Application Date: 2019-10-30
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Publication No.: US11594489B2Publication Date: 2023-02-28
- Inventor: Toshikazu Hanawa , Kazuhide Fukaya , Makoto Koshimizu
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: SGPatents PLLC
- Priority: JP2016-166580 20160829
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L21/768 ; H01L23/522

Abstract:
An interlayer insulating film has via holes. A sidewall conductive layer is arranged along a sidewall surface of one via hole and contains one or more kinds selected from a group including tungsten, titanium, titanium nitride, tantalum and molybdenum. A second metal wiring layer is embedded in one via hole and contains aluminum. A plug layer is embedded in the other via hole and contains one or more kinds selected from the group including tungsten, titanium, titanium nitride, tantalum and molybdenum.
Public/Granted literature
- US20200066646A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-02-27
Information query
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