公开(公告)号：US11594489B2

公开(公告)日：2023-02-28

申请号：US16668802

申请日：2019-10-30

Applicant: Renesas Electronics Corporation

Inventor： Toshikazu Hanawa ,  Kazuhide Fukaya ,  Makoto Koshimizu

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/522

Abstract: An interlayer insulating film has via holes. A sidewall conductive layer is arranged along a sidewall surface of one via hole and contains one or more kinds selected from a group including tungsten, titanium, titanium nitride, tantalum and molybdenum. A second metal wiring layer is embedded in one via hole and contains aluminum. A plug layer is embedded in the other via hole and contains one or more kinds selected from the group including tungsten, titanium, titanium nitride, tantalum and molybdenum.

公开(公告)号：US09935023B2

公开(公告)日：2018-04-03

申请号：US15630385

申请日：2017-06-22

Applicant: Renesas Electronics Corporation

Inventor： Toshikazu Hanawa ,  Kazuhide Fukaya ,  Kentaro Yamada

IPC: G01L21/30 ,  G01R31/00 ,  H01L21/66 ,  H01L21/311 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  G01N21/73 ,  G01N21/84 ,  G01N21/68 ,  H01J37/32

CPC classification number: H01L22/26 ,  G01N21/68 ,  G01N21/73 ,  G01N21/84 ,  G01N2021/8411 ,  G01N2021/8427 ,  G01N2201/1247 ,  H01J37/32963 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53266 ,  H01L23/5329

Abstract: A via hole is accurately formed in an interlayer insulating film over a metal wiring. Of emission spectra of plasma to be used for dry etching of the interlayer insulating film, the emission intensities of at least CO, CN, and AlF are monitored such that an end point of the dry etching of the interlayer insulating film is detected based on the emission intensities thereof.

公开(公告)号：US09711423B2

公开(公告)日：2017-07-18

申请号：US15205069

申请日：2016-07-08

Applicant: Renesas Electronics Corporation

Inventor： Toshikazu Hanawa ,  Kazuhide Fukaya ,  Kentaro Yamada

IPC: G01L21/30 ,  G01R31/00 ,  H01L21/66 ,  H01L21/311 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  G01N21/73 ,  G01N21/84

CPC classification number: H01L22/26 ,  G01N21/68 ,  G01N21/73 ,  G01N21/84 ,  G01N2021/8411 ,  G01N2021/8427 ,  G01N2201/1247 ,  H01J37/32963 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53266 ,  H01L23/5329

Abstract: A via hole is accurately formed in an interlayer insulating film over a metal wiring. Of emission spectra of plasma to be used for dry etching of the interlayer insulating film, the emission intensities of at least CO, CN, and AlF are monitored such that an end point of the dry etching of the interlayer insulating film is detected based on the emission intensities thereof.

公开(公告)号：US09595468B2

公开(公告)日：2017-03-14

申请号：US15053481

申请日：2016-02-25

Applicant: Renesas Electronics Corporation

Inventor： Toshikazu Hanawa ,  Kazuhide Fukaya

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76826 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/02315 ,  H01L21/0234 ,  H01L21/76801 ,  H01L21/76819

Abstract: To provide a semiconductor device having improved reliability. After formation of a first insulating film for an interlayer insulating film by spin coating, the surface of the first insulating film is subjected to a hydrophilicity improving treatment. A second insulating film for the interlayer insulating film is then formed on the first insulating film by spin coating. The interlayer insulating film is comprised of a stacked insulating film including the first insulating film and the second insulating film thereon. The interlayer insulating film therefore can have improved surface flatness.

Abstract translation: 提供具有提高的可靠性的半导体器件。 在通过旋涂形成用于层间绝缘膜的第一绝缘膜之后，对第一绝缘膜的表面进行亲水性改善处理。 然后通过旋涂在第一绝缘膜上形成用于层间绝缘膜的第二绝缘膜。 层间绝缘膜由其上包括第一绝缘膜和第二绝缘膜的叠层绝缘膜构成。 因此，层间绝缘膜可以具有改善的表面平坦度。